| Fabrication of highly ordered pore array in anodic aluminum oxide SK Hwang, SH Jeong, HY Hwang, OJ Lee, KH Lee Korean Journal of Chemical Engineering 19 (3), 467-473, 2002 | 192 | 2002 |
| Generation of stable complex gradients across two-dimensional surfaces and three-dimensional gels B Mosadegh, C Huang, JW Park, HS Shin, BG Chung, SK Hwang, KH Lee, ... Langmuir 23 (22), 10910-10912, 2007 | 147 | 2007 |
| 1.6kV, 2.9 mΩ cm2 normally-off p-GaN HEMT device I Hwang, H Choi, JW Lee, HS Choi, J Kim, J Ha, CY Um, SK Hwang, J Oh, ... 2012 24th International Symposium on Power Semiconductor Devices and ICs, 41-44, 2012 | 121 | 2012 |
| Impact of channel hot electrons on current collapse in AlGaN/GaN HEMTs I Hwang, J Kim, S Chong, HS Choi, SK Hwang, J Oh, JK Shin, UI Chung IEEE electron device letters 34 (12), 1494-1496, 2013 | 113 | 2013 |
| Carbon nanotubes based on anodic aluminum oxide nano-template SH Jeong, HY Hwang, SK Hwang, KH Lee Carbon 42 (10), 2073-2080, 2004 | 113 | 2004 |
| Fabrication of carbon nanotube emitters in an anodic aluminium oxide nanotemplate on a Si wafer by multi-step anodization SK Hwang, J Lee, SH Jeong, PS Lee, KH Lee Nanotechnology 16 (6), 850, 2005 | 82 | 2005 |
| Synthesis of carbon nanotubes with identical dimensions using an anodic aluminum oxide template on a silicon wafer OJ Lee, SK Hwang, SH Jeong, PS Lee, KH Lee Synthetic metals 148 (3), 263-266, 2005 | 43 | 2005 |
| Vertically aligned nanopillar arrays with hard skins using anodic aluminum oxide for nano imprint lithography PS Lee, OJ Lee, SK Hwang, SH Jung, SE Jee, KH Lee Chemistry of materials 17 (24), 6181-6185, 2005 | 41 | 2005 |
| High threshold voltage p-GaN gate power devices on 200 mm Si J Kim, SK Hwang, I Hwang, H Choi, S Chong, HS Choi, W Jeon, HS Choi, ... 2013 25th International Symposium on Power Semiconductor Devices & IC's …, 2013 | 32 | 2013 |
| Fabrication of vacuum tube arrays with a sub-micron dimension using anodic aluminum oxide nano-templates SK Hwang, SH Jeong, OJ Lee, KH Lee Microelectronic Engineering 77 (1), 2-7, 2005 | 23 | 2005 |
| Vertically Aligned Carbon‐Nanotube Arrays Showing Schottky Behavior at Room Temperature SH Jung, SH Jeong, SU Kim, SK Hwang, PS Lee, KH Lee, JH Ko, E Bae, ... Small 1 (5), 553-559, 2005 | 22 | 2005 |
| High-electron mobility transistor and method of manufacturing the same JS Kim, K Kim, JY Kim, JK Shin, J Oh, H Choi, JB Ha, SK Hwang, I Hwang US Patent 9,117,890, 2015 | 18 | 2015 |
| High electron mobility transistor and method of manufacturing the same KY Park, J Woo-Chul, YH Park, JK Shin, JB Ha, SK Hwang US Patent 8,860,089, 2014 | 17 | 2014 |
| High electron mobility transistor including plurality of gate electrodes J Woo-Chul, YH Park, KY Park, JK Shin, J Oh, JB Ha, SK Hwang US Patent 9,147,738, 2015 | 14 | 2015 |
| Estimation of Short Circuit Capability of GaN HEMTs using Transient Measurement I Hwang, S Chong, DC Shin, SK Hwang, Y Park, B Kim, J Kim, J Oh, ... IEEE Electron Device Letters, 2021 | 13 | 2021 |
| Combinatorial technique applied to the synthesis of carbon nanotubes SK Hwang, KD Lee, KH Lee Japanese Journal of Applied Physics 40 (6A), L580, 2001 | 13 | 2001 |
| High electron mobility transistor and method of manufacturing the same JS Kim, I Hwang, JK Shin, J Oh, J Woo-Chul, H Choi, SK Hwang US Patent 9,252,255, 2016 | 12 | 2016 |
| New phenomena for the lifetime prediction of TANOS-based charge trap NAND flash memory J Kim, C Kang, SI Chang, J Kim, Y Jeong, C Park, JH Kang, SH Kim, ... 68th Device Research Conference, 99-100, 2010 | 11 | 2010 |
| Analysis of DC/transient current and RTN behaviors related to traps in p-GaN gate HEMT JH Bae, S Hwang, J Shin, HI Kwon, CH Park, H Choi, JB Park, J Kim, J Ha, ... 2013 IEEE International Electron Devices Meeting, 31.6. 1-31.6. 4, 2013 | 10 | 2013 |
| Packing density control of carbon nanotube emitters in an anodic aluminum oxide nano-template on a Si wafer SK Hwang, SH Jeong, KH Lee Diamond and related materials 15 (10), 1501-1507, 2006 | 8 | 2006 |
