| The effect of interfacial layer properties on the performance of Hf-based gate stack devices G Bersuker, CS Park, J Barnett, PS Lysaght, PD Kirsch, CD Young, ... Journal of Applied Physics 100 (9), 2006 | 195 | 2006 |
| Electron spin resonance spectrometer and method for using same JP Campbell, KP Cheung, JT Ryan, PM Lenahan US Patent 9,507,004, 2016 | 95 | 2016 |
| Breakdown in the metal/high-k gate stack: Identifying the “weak link” in the multilayer dielectric G Bersuker, D Heh, C Young, H Park, P Khanal, L Larcher, A Padovani, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 90 | 2008 |
| Origin of the Flatband-Voltage Roll-Off Phenomenon in Metal/High- Gate Stacks G Bersuker, CS Park, HC Wen, K Choi, J Price, P Lysaght, HH Tseng, ... IEEE Transactions on Electron Devices 57 (9), 2047-2056, 2010 | 77 | 2010 |
| Modeling early breakdown failures of gate oxide in SiC power MOSFETs Z Chbili, A Matsuda, J Chbili, JT Ryan, JP Campbell, M Lahbabi, ... IEEE Transactions on Electron Devices 63 (9), 3605-3613, 2016 | 72 | 2016 |
| Observations of negative bias temperature instability defect generation via on the fly electron spin resonance JT Ryan, PM Lenahan, T Grasser, H Enichlmair Applied Physics Letters 96 (22), 2010 | 59 | 2010 |
| Spin dependent charge pumping in SiC metal-oxide-semiconductor field-effect-transistors BC Bittel, PM Lenahan, JT Ryan, J Fronheiser, AJ Lelis Applied Physics Letters 99 (8), 2011 | 50 | 2011 |
| Identification of the atomic scale defects involved in radiation damage in HfO/sub 2/based MOS devices JT Ryan, PM Lenahan, AY Kang, JF Conley, G Bersuker, P Lysaght IEEE transactions on nuclear science 52 (6), 2272-2275, 2005 | 46 | 2005 |
| Electron spin resonance observations of oxygen deficient silicon atoms in the interfacial layer of hafnium oxide based metal-oxide-silicon structures JT Ryan, PM Lenahan, G Bersuker, P Lysaght Applied physics letters 90 (17), 2007 | 39 | 2007 |
| Recovery-free electron spin resonance observations of NBTI degradation JT Ryan, PM Lenahan, T Grasser, H Enichlmair 2010 IEEE International reliability physics symposium, 43-49, 2010 | 37 | 2010 |
| Interface-state capture cross section—Why does it vary so much? JT Ryan, A Matsuda, JP Campbell, KP Cheung Applied Physics Letters 106 (16), 2015 | 35 | 2015 |
| Spin dependent tunneling spectroscopy in 1.2 nm dielectrics JT Ryan, PM Lenahan, AT Krishnan, S Krishnan Journal of Applied Physics 108 (6), 2010 | 30 | 2010 |
| Electron spin resonance scanning probe spectroscopy for ultrasensitive biochemical studies JP Campbell, JT Ryan, PR Shrestha, Z Liu, C Vaz, JH Kim, V Georgiou, ... Analytical chemistry 87 (9), 4910-4916, 2015 | 27 | 2015 |
| Spectroscopic charge pumping investigation of the amphoteric nature of Si/SiO2 interface states JT Ryan, LC Yu, JH Han, JJ Kopanski, KP Cheung, F Zhang, C Wang, ... Applied Physics Letters 98 (23), 2011 | 27 | 2011 |
| Characteristics of resistive memory read fluctuations in endurance cycling DM Nminibapiel, D Veksler, PR Shrestha, JH Kim, JP Campbell, JT Ryan, ... IEEE Electron Device Letters 38 (3), 326-329, 2017 | 22 | 2017 |
| On the “U-shaped” continuum of band edge states at the Si/SiO2 interface JT Ryan, RG Southwick, JP Campbell, KP Cheung, CD Young, JS Suehle Applied Physics Letters 99 (22), 2011 | 22 | 2011 |
| Impact of RRAM read fluctuations on the program-verify approach DM Nminibapiel, D Veksler, PR Shrestha, JP Campbell, JT Ryan, ... IEEE Electron Device Letters 38 (6), 736-739, 2017 | 20 | 2017 |
| Energy resolved spin dependent tunneling in 1.2 nm dielectrics JT Ryan, PM Lenahan, AT Krishnan, S Krishnan Applied Physics Letters 95 (10), 2009 | 19 | 2009 |
| Ferroelectricity in Polar Polymer‐Based FETs: A Hysteresis Analysis V Georgiou, D Veksler, JP Campbell, PR Shrestha, JT Ryan, DE Ioannou, ... Advanced functional materials 28 (10), 1705250, 2018 | 18 | 2018 |
| Analysis and control of RRAM overshoot current PR Shrestha, DM Nminibapiel, JP Campbell, JT Ryan, D Veksler, ... IEEE Transactions on Electron Devices 65 (1), 108-114, 2017 | 17 | 2017 |
