| GdVO4 as a new medium for solid-state lasers: some optical and thermal properties of crystals doped with Cd3+, Tm3+, and Er3+ ions PA Studenikin, AI Zagumennyi, YD Zavartsev, PA Popov, IA Shcherbakov Quantum electronics 25 (12), 1162, 1995 | 223 | 1995 |
| Performance of a diode-pumped 5 W Nd3+: GdVO4 microchip laser at 1.06 μm CP Wyss, W Lüthy, HP Weber, VI Vlasov, YD Zavartsev, PA Studenikin, ... Applied Physics B 68, 659-661, 1999 | 128* | 1999 |
| Czochralski growth and characterization of (Lu1− xGdx) 2SiO5 single crystals for scintillators GB Loutts, AI Zagumennyi, SV Lavrishchev, YD Zavartsev, PA Studenikin Journal of Crystal Growth 174 (1-4), 331-336, 1997 | 91 | 1997 |
| Scintillating substance and scintillating wave-guide element AI Zagumennyi, YD Zavartsev, PA Studenekin US Patent 6,278,832, 2001 | 80 | 2001 |
| Laser operation and spectroscopy of Tm: Ho: GdVO4 PJ Morris, W Lüthy, HP Weber, YD Zavartsev, PA Studenikin, ... Optics communications 111 (5-6), 493-496, 1994 | 57 | 1994 |
| Tm3+: GdVO4—a new efficient medium for diode-pumped 2—μm lasers VA Mikhailov, YD Zavartsev, AI Zagumennyi, VG Ostroumov, ... Quantum Electronics 27 (1), 13, 1997 | 47 | 1997 |
| A diode-pumped 1.4-W Tm/sup 3+: GdVO/sub 4/microchip laser at 1.9/spl mu/m CP Wyss, W Luthy, HP Weber, VI Vlasov, YD Zavartsev, PA Studenikin, ... IEEE journal of quantum electronics 34 (12), 2380-2382, 1998 | 43 | 1998 |
| Spectroscopic properties and lasing of Nd: Gd0. 5La0. 5VO4 crystals VG Ostroumov, G Huber, AI Zagumennyi, YD Zavartsev, PA Studenikin, ... Optics communications 124 (1-2), 63-68, 1996 | 37 | 1996 |
| Radiophys SN Vlasov, VA Petrishchev, VI Talanov Quantum Electron 14, 1062-1070, 1974 | 31 | 1974 |
| GdVO4 crystals with Nd3+, Tm3+, Ho3+, and Er3+ ions for diode-pumped microchip laser AI Zagumennyi, YD Zavartsev, PA Studenikin, IA Shcherbakov, ... Solid State Lasers V 2698, 182-192, 1996 | 30 | 1996 |
| Thermal conductivity of a Tm3+: GdVO4 crystal and the operational characteristics of a microchip laser based on it AI Zagumennyi, YD Zavartsev, PA Studenikin, VI Vlasov, IA Shcherbakov, ... Quantum Electronics 29 (4), 298, 1999 | 27 | 1999 |
| Emission properties of a Tm30. 1mm+: GdVO4 microchip laser at 1.9 μm CP Wyss, W Lüthy, HP Weber, VI Vlasov, YD Zavartsev, PA Studenikin, ... Applied Physics B 67, 545-548, 1998 | 27 | 1998 |
| Excitation of the thulium 1G4 level in various crystal hosts CP Wyss, M Kehrli, T Huber, PJ Morris, W Lüthy, HP Weber, ... Journal of luminescence 82 (2), 137-144, 1999 | 25 | 1999 |
| LSO-Ce fluorescence spectra and kinetics for UV, VUV and X-ray excitation IA Kamenskikh, VV Mikhailin, IH Munro, DY Petrovykh, DA Shaw, ... Radiation effects and defects in solids 135 (1-4), 391-396, 1995 | 22 | 1995 |
| Efficient 3-μm Cr3+: Yb3+: Ho3+: YSGG crystal laser AF Umyskov, YD Zavartsev, AI Zagumennyi, VV Osiko, PA Studenikin Quantum Electronics 26 (9), 771, 1996 | 19 | 1996 |
| Three-stage amplifier of single-mode radiation generated by a YAG: Nd laser with a passive switch made of an LiF: F2-crystal TT Basiev, AN Kravets, SB Mirov, AV Fedin Soviet Journal of Quantum Electronics 21 (7), 743, 1991 | 16* | 1991 |
| Temperature measurements of refraction indices of rare earth garnets EV Zharikov, YS Privis, PA Studenikin, VA Chikov, VD Shigorin, ... Kristallografiya 34 (5), 1181-1184, 1989 | 14 | 1989 |
| Short-wavelength (λ= 914 nm) microlaser operating on an Nd3+: YVO4 crystal VA Sychugov, VA Mikhailov, VA Kondratyuk, NM Lyndin, J Frahm, ... Quantum Electronics 30 (1), 13, 2000 | 13 | 2000 |
| Cr3+, Yb3+, Ho3+: YSGG crystal laser with a continuously tunable emission wavelength in the range 2.84–3.05 μm AF Umyskov, YD Zavartsev, AI Zagumennyi, VV Osiko, PA Studenikin Quantum Electronics 26 (7), 563, 1996 | 11 | 1996 |
| Cascade laser oscillation due to Ho3+ ions in a (Cr, Yb, Ho): YSGG yttrium-scandium-gallium garnet crystal YD Zavartsev, VV Osiko, SG Semenkov, PA Studenikin, AF Umyskov Quantum Electronics 23 (4), 312, 1993 | 11 | 1993 |
