Growth of ITO films by modified chemical vapor deposition method IG Atabaev, MU Hajiev, VA Pak Int. J. Thin Films Sci. Technol 5 (1), 13-16, 2016 | 11 | 2016 |
Nonequilibrium diffusion of boron in SiC at low temperatures IG Atabaev, TM Saliev, EN Bakhranov, D Saidov, K Juraev, CC Tin, ... Materials Sciences and Applications 1 (02), 53, 2010 | 10 | 2010 |
Dependence of the divacancy concentration on the germanium content in Si1 − x Ge x alloys under irradiation by fast and slow neutrons MS Saidov, SL Lutpullaev, A Yusupov, IG Atabaev, LI Khirunenko, ... Physics of the Solid State 49, 1658-1660, 2007 | 6 | 2007 |
Growth of transparent electrical conducting films of indium and tin oxides by chemical vapor deposition IG Atabaev, MU Hajiev, VA Pak, SB Zakirova, KN Juraev Applied Solar Energy 52, 118-121, 2016 | 5 | 2016 |
Correlation between the structure, specific resistance, and optical properties of ITO films grown by CVD IG Atabaev, MU Khazhiev, SB Zakirova, Z Shermatov Applied Solar Energy 53, 322-325, 2017 | 4 | 2017 |
Spectral dependence of optical absorption of 4H-SiC doped with boron and aluminum IG Atabaev, KN Juraev, MU Hajiev Journal of Spectroscopy 2018, 2018 | 3 | 2018 |
Effect of surface chemical treatments on Ti-p-Si1 − x Gex and Ni-p-Si1 − x Ge x contact properties IG Atabaev, MU Hajiev, NA Matchanov, TM Saliev, KA Bobojonov Semiconductors 44, 1606-1610, 2010 | 3 | 2010 |
Effect of different chemical treatments of surface on the height of Al-p-SiGe and Au-n-SiGe barriers IG Atabaev, NA Matchanov, MU Hajiev, V Pak, TM Saliev Semiconductors 44, 605-609, 2010 | 2 | 2010 |
Influence of Ge content on formation of radiation defects in Si1− xGex solid solutions IG Atabaev, NA Matchanov, A Yusupov, DS Saidov, MS Saidov Computational materials science 44 (2), 832-834, 2008 | 2 | 2008 |
Влияние поверхностных химических обработок на свойства контактов Ti− p-Si1− xGex и Ni− p-Si1− x Gex ИГ Атабаев, МУ Хажиев, НА Матчанов, ТМ Салиев, КА Бобожонов Физика и техника полупроводников 44 (12), 1655-1659, 2010 | 1 | 2010 |
Features of n-SnO2/p-Si Structural Heterojunction Manufactured Features of n-SnO2/p-Si Structural Heterojunction Manufactured by the Chemical Steam-Gas Deposition Method MU Hajiev, RR Kabulov Int. J. Thin. Fil. Sci. Tec 10 (2), 83-87, 2021 | | 2021 |
Features of n-SnO2/p-Si Structural Heterojunction Manufactured by the Chemical Steam-Gas Deposition Method MU Hajiev, RR Kabulov Int. J. Thin. Fil. Sci. Tec 10 (2), 83-87, 2021 | | 2021 |
International Journal of Thin Film Science and Technolog y IG Atabaev, MU Hajiev, VA Pak Int. J. Thin. Fil. Sci. Tec 5 (1), 13-16, 2016 | | 2016 |
On optimization of a technology of industrial silicon receiving and using a recrystallization for purification; Ob optimizatsii tekhnologii polucheniya tekhnicheskogo kremniya … AN Abdullaev, IG Atabaev, SL Lutpullaev, MU Khajiev, ... Uzbekiston Fizika Zhurnali 15, 2013 | | 2013 |
Влияние различных химических обработок поверхности на высоту барьеров Al− p-SiGe, Au− n-SiGe ИГ Атабаев, НА Матчанов, МУ Хажиев, В Пак, ТМ Салиев Физика и техника полупроводников 44 (5), 631-635, 2010 | | 2010 |
Research of a correlation of a current carriers lifetime and a specific resistance of Si {sub 1-x} Ge {sub x} crystals grown by floating zone method; Issledovaniye korrelyatsii … IG Atabaev, NA Matchanov, EN Bakhranov, MU Hajiev, D Saidov Uzbekiston Respublikasi Fanlar Akademiyasining Maruzalari, 2007 | | 2007 |
Dependence of the Divacancy Concentration on the Germanium Content in Si^ Ge^ Alloys under Irradiation by Fast and Slow Neutrons MS Saidov", SL LutpullaeV, A. Yusupov0, 1. G … NA MatchanoV Physics of the Solid State 49 (9-12), 1658, 2007 | | 2007 |
Spectral dependence of photocurrent in p-n Si1xGex irradiated by electrons IG Atabaev, NA Matchanov, EN Bakhranov, M Khajiev, DC Saidov | | 2004 |
Applied Solar Energy SM Khairnasov, AM Naumova | | |
Photosensitivity of Ni-p-Si< Sn> structures NA Matchanov, EN Bakhranov, SN Usmanov, MU Khajiev | | |