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Mardonbek Hajiev
Mardonbek Hajiev
Physical-Technical Institute of Uzbekistan Academy of Sciences
Verified email at uzsci.net - Homepage
Title
Cited by
Cited by
Year
Growth of ITO films by modified chemical vapor deposition method
IG Atabaev, MU Hajiev, VA Pak
Int. J. Thin Films Sci. Technol 5 (1), 13-16, 2016
112016
Nonequilibrium diffusion of boron in SiC at low temperatures
IG Atabaev, TM Saliev, EN Bakhranov, D Saidov, K Juraev, CC Tin, ...
Materials Sciences and Applications 1 (02), 53, 2010
102010
Dependence of the divacancy concentration on the germanium content in Si1 − x Ge x alloys under irradiation by fast and slow neutrons
MS Saidov, SL Lutpullaev, A Yusupov, IG Atabaev, LI Khirunenko, ...
Physics of the Solid State 49, 1658-1660, 2007
62007
Growth of transparent electrical conducting films of indium and tin oxides by chemical vapor deposition
IG Atabaev, MU Hajiev, VA Pak, SB Zakirova, KN Juraev
Applied Solar Energy 52, 118-121, 2016
52016
Correlation between the structure, specific resistance, and optical properties of ITO films grown by CVD
IG Atabaev, MU Khazhiev, SB Zakirova, Z Shermatov
Applied Solar Energy 53, 322-325, 2017
42017
Spectral dependence of optical absorption of 4H-SiC doped with boron and aluminum
IG Atabaev, KN Juraev, MU Hajiev
Journal of Spectroscopy 2018, 2018
32018
Effect of surface chemical treatments on Ti-p-Si1 − x Gex and Ni-p-Si1 − x Ge x contact properties
IG Atabaev, MU Hajiev, NA Matchanov, TM Saliev, KA Bobojonov
Semiconductors 44, 1606-1610, 2010
32010
Effect of different chemical treatments of surface on the height of Al-p-SiGe and Au-n-SiGe barriers
IG Atabaev, NA Matchanov, MU Hajiev, V Pak, TM Saliev
Semiconductors 44, 605-609, 2010
22010
Influence of Ge content on formation of radiation defects in Si1− xGex solid solutions
IG Atabaev, NA Matchanov, A Yusupov, DS Saidov, MS Saidov
Computational materials science 44 (2), 832-834, 2008
22008
Влияние поверхностных химических обработок на свойства контактов Ti− p-Si1− xGex и Ni− p-Si1− x Gex
ИГ Атабаев, МУ Хажиев, НА Матчанов, ТМ Салиев, КА Бобожонов
Физика и техника полупроводников 44 (12), 1655-1659, 2010
12010
Features of n-SnO2/p-Si Structural Heterojunction Manufactured Features of n-SnO2/p-Si Structural Heterojunction Manufactured by the Chemical Steam-Gas Deposition Method
MU Hajiev, RR Kabulov
Int. J. Thin. Fil. Sci. Tec 10 (2), 83-87, 2021
2021
Features of n-SnO2/p-Si Structural Heterojunction Manufactured by the Chemical Steam-Gas Deposition Method
MU Hajiev, RR Kabulov
Int. J. Thin. Fil. Sci. Tec 10 (2), 83-87, 2021
2021
International Journal of Thin Film Science and Technolog y
IG Atabaev, MU Hajiev, VA Pak
Int. J. Thin. Fil. Sci. Tec 5 (1), 13-16, 2016
2016
On optimization of a technology of industrial silicon receiving and using a recrystallization for purification; Ob optimizatsii tekhnologii polucheniya tekhnicheskogo kremniya …
AN Abdullaev, IG Atabaev, SL Lutpullaev, MU Khajiev, ...
Uzbekiston Fizika Zhurnali 15, 2013
2013
Влияние различных химических обработок поверхности на высоту барьеров Al− p-SiGe, Au− n-SiGe
ИГ Атабаев, НА Матчанов, МУ Хажиев, В Пак, ТМ Салиев
Физика и техника полупроводников 44 (5), 631-635, 2010
2010
Research of a correlation of a current carriers lifetime and a specific resistance of Si {sub 1-x} Ge {sub x} crystals grown by floating zone method; Issledovaniye korrelyatsii …
IG Atabaev, NA Matchanov, EN Bakhranov, MU Hajiev, D Saidov
Uzbekiston Respublikasi Fanlar Akademiyasining Maruzalari, 2007
2007
Dependence of the Divacancy Concentration on the Germanium Content in Si^ Ge^ Alloys under Irradiation by Fast and Slow Neutrons MS Saidov", SL LutpullaeV, A. Yusupov0, 1. G …
NA MatchanoV
Physics of the Solid State 49 (9-12), 1658, 2007
2007
Spectral dependence of photocurrent in p-n Si1xGex irradiated by electrons
IG Atabaev, NA Matchanov, EN Bakhranov, M Khajiev, DC Saidov
2004
Applied Solar Energy
SM Khairnasov, AM Naumova
Photosensitivity of Ni-p-Si< Sn> structures
NA Matchanov, EN Bakhranov, SN Usmanov, MU Khajiev
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