Anomalous reduction of thermal conductivity in coherent nanocrystal architecture for silicon thermoelectric material Y Nakamura, M Isogawa, T Ueda, S Yamasaka, H Matsui, J Kikkawa, ... Nano Energy 12, 845-851, 2015 | 182 | 2015 |
Observation of the quantum-confinement effect in individual Ge nanocrystals on oxidized Si substrates using scanning tunneling spectroscopy Y Nakamura, K Watanabe, Y Fukuzawa, M Ichikawa Applied Physics Letters 87 (13), 2005 | 134 | 2005 |
A reproducible method to fabricate atomically sharp tips for scanning tunneling microscopy Y Nakamura, Y Mera, K Maeda Review of Scientific Instruments 70 (8), 3373-3376, 1999 | 106 | 1999 |
Nanostructure design for drastic reduction of thermal conductivity while preserving high electrical conductivity Y Nakamura Science and Technology of advanced MaTerialS 19 (1), 31-43, 2018 | 91 | 2018 |
Quantum-confinement effect in individual Ge1− xSnx quantum dots on Si (111) substrates covered with ultrathin SiO2 films using scanning tunneling spectroscopy Y Nakamura, A Masada, M Ichikawa Applied physics letters 91 (1), 2007 | 86 | 2007 |
Methodology of thermoelectric power factor enhancement by controlling nanowire interface T Ishibe, A Tomeda, K Watanabe, Y Kamakura, N Mori, N Naruse, Y Mera, ... ACS applied materials & interfaces 10 (43), 37709-37716, 2018 | 81 | 2018 |
Phonon transport control by nanoarchitecture including epitaxial Ge nanodots for Si-based thermoelectric materials S Yamasaka, Y Nakamura, T Ueda, S Takeuchi, A Sakai Scientific reports 5 (1), 14490, 2015 | 79 | 2015 |
Self-organized formation and self-repair of a two-dimensional nanoarray of Ge quantum dots epitaxially grown on ultrathin SiO2-covered Si substrates Y Nakamura, A Murayama, R Watanabe, T Iyoda, M Ichikawa Nanotechnology 21 (9), 095305, 2010 | 69 | 2010 |
Nanoscale imaging of electronic surface transport probed by atom movements induced by scanning tunneling microscope current Y Nakamura, Y Mera, K Maeda Physical review letters 89 (26), 266805, 2002 | 60 | 2002 |
Ultimate confinement of phonon propagation in silicon nanocrystalline structure T Oyake, L Feng, T Shiga, M Isogawa, Y Nakamura, J Shiomi Physical Review Letters 120 (4), 045901, 2018 | 59 | 2018 |
Independent control of electrical and heat conduction by nanostructure designing for Si-based thermoelectric materials S Yamasaka, K Watanabe, S Sakane, S Takeuchi, A Sakai, K Sawano, ... Scientific Reports 6 (1), 22838, 2016 | 59 | 2016 |
Epitaxial growth of high quality Ge films on Si (001) substrates by nanocontact epitaxy Y Nakamura, A Murayama, M Ichikawa Crystal growth & design 11 (7), 3301-3305, 2011 | 58 | 2011 |
Quantum confinement observed in Ge nanodots on an oxidized Si surface A Konchenko, Y Nakayama, I Matsuda, S Hasegawa, Y Nakamura, ... Physical Review B 73 (11), 113311, 2006 | 54 | 2006 |
Quantum fluctuation of tunneling current in individual Ge quantum dots induced by a single-electron transfer Y Nakamura, M Ichikawa, K Watanabe, Y Hatsugai Applied physics letters 90 (15), 2007 | 49 | 2007 |
Formation of ultrahigh density and ultrasmall coherent β‐FeSi2 nanodots on Si (111) substrates using Si and Fe codeposition method Y Nakamura, Y Nagadomi, SP Cho, N Tanaka, M Ichikawa Journal of applied physics 100 (4), 2006 | 48 | 2006 |
Thermoelectric power factor enhancement based on carrier transport physics in ultimately phonon-controlled Si nanostructures S Sakane, T Ishibe, T Taniguchi, N Naruse, Y Mera, T Fujita, MM Alam, ... Materials Today Energy 13, 56-63, 2019 | 44 | 2019 |
Epitaxial growth of ultrahigh density Ge1− xSnx quantum dots on Si (111) substrates by codeposition of Ge and Sn on ultrathin SiO2 films Y Nakamura, A Masada, SP Cho, N Tanaka, M Ichikawa Journal of Applied Physics 102 (12), 2007 | 44 | 2007 |
Nanocontact heteroepitaxy of thin GaSb and AlGaSb films on Si substrates using ultrahigh-density nanodot seeds Y Nakamura, T Miwa, M Ichikawa Nanotechnology 22 (26), 265301, 2011 | 43 | 2011 |
High thermoelectric power factor realization in Si-rich SiGe/Si superlattices by super-controlled interfaces T Taniguchi, T Ishibe, N Naruse, Y Mera, MM Alam, K Sawano, ... ACS applied materials & interfaces 12 (22), 25428-25434, 2020 | 42 | 2020 |
Formation of strained iron silicide nanodots by Fe deposition on Si nanodots on oxidized Si (111) surfaces Y Nakamura, Y Nagadomi, SP Cho, N Tanaka, M Ichikawa Physical Review B 72 (7), 075404, 2005 | 42 | 2005 |