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Maliha Noshin
Maliha Noshin
Electrical Engineering, Stanford University
Verified email at stanford.edu
Title
Cited by
Cited by
Year
Equilibrium molecular dynamics (MD) simulation study of thermal conductivity of graphene nanoribbon: a comparative study on MD potentials
AI Khan, IA Navid, M Noshin, HMA Uddin, FF Hossain, S Subrina
Electronics 4 (4), 1109-1124, 2015
772015
Impact of vacancies on the thermal conductivity of graphene nanoribbons: A molecular dynamics simulation study
M Noshin, AI Khan, IA Navid, HM Uddin, S Subrina
Aip Advances 7 (1), 2017
492017
Thermal transport characterization of hexagonal boron nitride nanoribbons using molecular dynamics simulation
AI Khan, IA Navid, M Noshin, S Subrina
AIP Advances 7 (10), 2017
382017
Thermal transport characterization of stanene/silicene heterobilayer and stanene bilayer nanostructures
M Noshin, AI Khan, S Subrina
Nanotechnology, 2018
222018
Modeling and computation of thermal and optical properties in silicene supported honeycomb bilayer and heterobilayer nanostructures
M Noshin, AI Khan, R Chakraborty, S Subrina
Materials Science in Semiconductor Processing 129, 105776, 2021
102021
A molecular dynamics study on thermal conductivity of armchair graphene nanoribbon
AI Khan, IA Navid, FF Hossain, M Noshin, S Subrina
2016 IEEE Region 10 Conference (TENCON), 2775-2778, 2016
92016
Nanoporous GaN on p-type GaN: A Mg out-diffusion compensation layer for heavily Mg-doped p-type GaN
KJ Lee, Y Nakazato, J Chun, X Wen, C Meng, R Soman, M Noshin, ...
Nanotechnology 33 (50), 505704, 2022
32022
Demonstration of N-polar All-AlGaN High Electron Mobility Transistors with 375 mA/mm Drive Current
M Noshin, R Soman, S Chowdhury
IEEE Electron Device Letters 44 (7), 1072-1075, 2023
22023
A systematic study of the regrown interface impurities in unintentionally doped Ga-polar c-plane GaN and methods to reduce the same
M Noshin, R Soman, X Xu, S Chowdhury
Semiconductor Science and Technology 37, 075018, 2022
22022
Thermal transport in defected armchair graphene nanoribbon: a molecular dynamics study
M Noshin, AI Khan, IA Navid, S Subrina
TENCON 2017-2017 IEEE Region 10 Conference, 2600-2603, 2017
22017
From Wide to Ultrawide-Bandgap Semiconductors for High Power and High Frequency Electronic Devices
K Woo, Z Bian, M Noshin, R Perez Martinez, M Malakoutian, B Shankar, ...
Journal of Physics: Materials, 2024
12024
Cooling future system-on-chips with diamond inter-tiers
M Malakoutian, A Kasperovich, D Rich, K Woo, C Perez, R Soman, ...
Cell Reports Physical Science 4 (12), 2023
12023
A systematic study on the efficacy of low-temperature GaN regrown on p-GaN to suppress Mg out-diffusion
KJ Lee, X Wen, Y Nakazato, J Chun, M Noshin, C Meng, S Chowdhury
Frontiers in Materials 10, 1229036, 2023
12023
Growth and mobility characterization of N-polar AlGaN channel high electron mobility transistors
M Noshin, X Wen, R Soman, X Xu, S Chowdhury
Applied Physics Letter 123 (6), 062103, 2023
12023
A study on MOCVD growth window for high quality N-polar GaN for vertical device applications
R Soman, M Noshin, S Chowdhury
Semiconductor Science and Technology 37 (9), 095003, 2022
12022
10 MHz-Switching on GaN Trench CAVET up to 300° C Operation Enabled by High Channel Mobility
X Wen, B Shankar, K Lee, H Kasai, M Noshin, J Chun, Y Nakazato, ...
IEEE Electron Device Letters, 2024
2024
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