Equilibrium molecular dynamics (MD) simulation study of thermal conductivity of graphene nanoribbon: a comparative study on MD potentials AI Khan, IA Navid, M Noshin, HMA Uddin, FF Hossain, S Subrina Electronics 4 (4), 1109-1124, 2015 | 77 | 2015 |
Impact of vacancies on the thermal conductivity of graphene nanoribbons: A molecular dynamics simulation study M Noshin, AI Khan, IA Navid, HM Uddin, S Subrina Aip Advances 7 (1), 2017 | 49 | 2017 |
Thermal transport characterization of hexagonal boron nitride nanoribbons using molecular dynamics simulation AI Khan, IA Navid, M Noshin, S Subrina AIP Advances 7 (10), 2017 | 38 | 2017 |
Thermal transport characterization of stanene/silicene heterobilayer and stanene bilayer nanostructures M Noshin, AI Khan, S Subrina Nanotechnology, 2018 | 22 | 2018 |
Modeling and computation of thermal and optical properties in silicene supported honeycomb bilayer and heterobilayer nanostructures M Noshin, AI Khan, R Chakraborty, S Subrina Materials Science in Semiconductor Processing 129, 105776, 2021 | 10 | 2021 |
A molecular dynamics study on thermal conductivity of armchair graphene nanoribbon AI Khan, IA Navid, FF Hossain, M Noshin, S Subrina 2016 IEEE Region 10 Conference (TENCON), 2775-2778, 2016 | 9 | 2016 |
Nanoporous GaN on p-type GaN: A Mg out-diffusion compensation layer for heavily Mg-doped p-type GaN KJ Lee, Y Nakazato, J Chun, X Wen, C Meng, R Soman, M Noshin, ... Nanotechnology 33 (50), 505704, 2022 | 3 | 2022 |
Demonstration of N-polar All-AlGaN High Electron Mobility Transistors with 375 mA/mm Drive Current M Noshin, R Soman, S Chowdhury IEEE Electron Device Letters 44 (7), 1072-1075, 2023 | 2 | 2023 |
A systematic study of the regrown interface impurities in unintentionally doped Ga-polar c-plane GaN and methods to reduce the same M Noshin, R Soman, X Xu, S Chowdhury Semiconductor Science and Technology 37, 075018, 2022 | 2 | 2022 |
Thermal transport in defected armchair graphene nanoribbon: a molecular dynamics study M Noshin, AI Khan, IA Navid, S Subrina TENCON 2017-2017 IEEE Region 10 Conference, 2600-2603, 2017 | 2 | 2017 |
From Wide to Ultrawide-Bandgap Semiconductors for High Power and High Frequency Electronic Devices K Woo, Z Bian, M Noshin, R Perez Martinez, M Malakoutian, B Shankar, ... Journal of Physics: Materials, 2024 | 1 | 2024 |
Cooling future system-on-chips with diamond inter-tiers M Malakoutian, A Kasperovich, D Rich, K Woo, C Perez, R Soman, ... Cell Reports Physical Science 4 (12), 2023 | 1 | 2023 |
A systematic study on the efficacy of low-temperature GaN regrown on p-GaN to suppress Mg out-diffusion KJ Lee, X Wen, Y Nakazato, J Chun, M Noshin, C Meng, S Chowdhury Frontiers in Materials 10, 1229036, 2023 | 1 | 2023 |
Growth and mobility characterization of N-polar AlGaN channel high electron mobility transistors M Noshin, X Wen, R Soman, X Xu, S Chowdhury Applied Physics Letter 123 (6), 062103, 2023 | 1 | 2023 |
A study on MOCVD growth window for high quality N-polar GaN for vertical device applications R Soman, M Noshin, S Chowdhury Semiconductor Science and Technology 37 (9), 095003, 2022 | 1 | 2022 |
10 MHz-Switching on GaN Trench CAVET up to 300° C Operation Enabled by High Channel Mobility X Wen, B Shankar, K Lee, H Kasai, M Noshin, J Chun, Y Nakazato, ... IEEE Electron Device Letters, 2024 | | 2024 |