| Remote inductively coupled plasmas in Ar/N2 mixtures and implications for plasma enhanced ALD DR Boris, MJ Johnson, JM Woodward, VD Wheeler, SG Walton Journal of Vacuum Science & Technology A 42 (3), 2024 | | 2024 |
| Coherent X-ray Spectroscopy Elucidates Nanoscale Dynamics of Plasma-Enhanced Thin-Film Growth P Myint, JM Woodward, C Wang, X Zhang, L Wiegart, A Fluerasu, ... ACS nano 18 (3), 1982-1994, 2024 | 1 | 2024 |
| (Invited) Understanding Plasma-Assisted Atomic Layer Epitaxy of InN and Opportunities for Collaboration through the Office of Naval Research Global CR Eddy Jr, N Nepal, J Woodward, P Myint, C Wang, X Zhang, L Wiegart, ... Electrochemical Society Meeting Abstracts 244, 1570-1570, 2023 | | 2023 |
| Atomic Layer Deposition as the Enabler for the Metastable Semiconductor InN and Its Alloys H Pedersen, CW Hsu, N Nepal, JM Woodward, CR Eddy Jr Crystal Growth & Design 23 (10), 7010-7025, 2023 | 1 | 2023 |
| Demands of surgical teams in robotic-assisted surgery: An assessment of intraoperative workload within different surgical specialties J Zamudio, J Woodward, FF Kanji, JT Anger, K Catchpole, TN Cohen The American Journal of Surgery 226 (3), 365-370, 2023 | 6 | 2023 |
| Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition JM Woodward, SG Rosenberg, DR Boris, MJ Johnson, SG Walton, ... Journal of Vacuum Science & Technology A 40 (6), 2022 | 3 | 2022 |
| Crystallization Behavior of Zinc-Doped Nb2O5 Thin Films Synthesized by Atomic Layer Deposition AC Kozen, JM Woodward, LB Ruppalt, H Cho, CA Ventrice Jr, AH Rowley, ... ACS Applied Electronic Materials 4 (9), 4280-4287, 2022 | 2 | 2022 |
| Advanced AlF3-passivated Aluminum mirrors for UV astronomy LV Rodríguez-de Marcos, DR Boris, J Del Hoyo, V Wheeler, ... Astronomical Optics: Design, Manufacture, and Test of Space and Ground …, 2021 | 7 | 2021 |
| Influence of Plasma Species on the Growth Mode and Material Properties of Indium Nitride Grown by Plasma-Assisted Atomic Layer Epitaxy. JM Woodward, SG Rosenberg, DR Boris, SD Johnson, ZR Robinson, ... Sandia National Lab.(SNL-NM), Albuquerque, NM (United States), 2021 | | 2021 |
| High growth-rate MOCVD homoepitaxial [beta]-Ga2O3 films and MOSFETs for power electronics applications MJ Tadjer, F Alema, A Osinsky, M Mastro, N Nepal, J Woodward, ... Oxide-based Materials and Devices XII 11687, 116870S, 2021 | 1 | 2021 |
| Room temperature plasma-etching and surface passivation of far-ultraviolet Al mirrors using electron beam generated plasmas LVR de Marcos, DR Boris, E Gray, JG del Hoyo, AC Kozen, ... Optical Materials Express 11 (3), 740-756, 2021 | 13 | 2021 |
| Band offset determination for amorphous Al2O3 deposited on bulk AlN and atomic-layer epitaxial AlN on sapphire C Fares, F Ren, MJ Tadjer, J Woodward, MA Mastro, BN Feigelson, ... Applied Physics Letters 117 (18), 2020 | 7 | 2020 |
| Characterization of β-Ga2O3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates MJ Tadjer, F Alema, A Osinsky, MA Mastro, N Nepal, JM Woodward, ... Journal of Physics D: Applied Physics 54 (3), 034005, 2020 | 32 | 2020 |
| (Invited) A Surface Science Toolbox for Understanding Atomic Layer Epitaxy CR Eddy Jr, SG Rosenberg, JM Woodward, VR Anderson, SD Johnson, ... Electrochemical Society Meeting Abstracts 236, 1154-1154, 2019 | | 2019 |
| Influence of temperature on atomic layer epitaxial growth of indium nitride assessed with in situ grazing incidence small-angle x-ray scattering JM Woodward, SG Rosenberg, AC Kozen, N Nepal, SD Johnson, ... Journal of Vacuum Science & Technology A 37 (3), 2019 | 7 | 2019 |
| Valence and conduction band offsets for InN and III-nitride ternary alloys on (− 201) bulk β-Ga2O3 C Fares, MJ Tadjer, J Woodward, N Nepal, MA Mastro, CR Eddy, F Ren, ... ECS Journal of Solid State Science and Technology 8 (7), Q3154, 2019 | 19 | 2019 |
| In situ studies of low temperature atomic level processing of GaN surfaces for atomic layer epitaxial growth SG Rosenberg, C Wagenbach, VR Anderson, SD Johnson, N Nepal, ... Journal of Vacuum Science & Technology A 37 (2), 2019 | 7 | 2019 |
| Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering N Nepal, VR Anderson, SD Johnson, BP Downey, DJ Meyer, ... Journal of Vacuum Science & Technology A 37 (2), 2019 | 8 | 2019 |
| Low temperature surface preparation of GaN substrates for atomic layer epitaxial growth: Assessment of ex situ preparations SG Rosenberg, DJ Pennachio, C Wagenbach, SD Johnson, N Nepal, ... Journal of Vacuum Science & Technology A 37 (2), 2019 | 6 | 2019 |
| III-nitride terahertz photodetectors for the Reststrahlen gap of intersubband optoelectronics R Paiella, H Durmaz, FF Sudradjat, D Nothern, GC Brummer, W Zhang, ... Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and …, 2017 | | 2017 |
Theodore D MoustakasBoston University, Electrical and Computer Engineering DepartmentVerified email at bu.edu
