| Constructive and comprehensive studies on the advantages of using staggered InxGa1-xN/InyGa1-yN QWs in LEDs D Biswas, A Mistry, A Gorai Optical Materials 66, 367-373, 2017 | 21 | 2017 |
| The electron–hole overlap in the parabolic quantum well light emitting diode is much superior to the rectangular: even to that of a staggered quantum well A Mistry, A Gorai, D Biswas Optical and Quantum Electronics 51, 1-11, 2019 | 11 | 2019 |
| InGaN based tunable green light-emitting diodes using InAlN interlayer and strain compensated AlGaN interlayer for better device performance A Mistry Optics & Laser Technology 124, 105975, 2020 | 7 | 2020 |
| Inclusion of Indium, with doping in the barriers of InxGa1-xN/InyGa1-yN quantum wells reveals striking modifications of the emission properties with current for better … A Gorai, A Mistry, S Panda, D Biswas Photonics and Nanostructures-Fundamentals and Applications 28, 70-74, 2018 | 7 | 2018 |
| Performance improvement of green QW LEDs, for the different doping in the barriers, using InAlN interlayer and strain compensated AlGaN interlayer at the InGaN/GaN interface A Mistry Optical Materials 113, 110863, 2021 | 4 | 2021 |
| Useful studies on the optical properties of annealed and non annealed InGaN/GaN single QW LEDs, with different dopings in the barrier A Mistry, D Biswas Optical Materials 84, 22-27, 2018 | 3 | 2018 |
| A multispectral linear optical sweep source, based on tunable InGaN/GaN QW LEDs D Biswas, A Gorai, A Mistry Optik 158, 688-692, 2018 | 3 | 2018 |
| Adulteration of Milk Identification Using Ionic Polymer Metal Composite as Sensor J Basu Pal, A Mistry, D Bandyopadhyay, B Biswas, S Bhattacharya IEEE Sensors Letters 7 (3), 1-3, 2023 | 2 | 2023 |
| Evidence of the formation of small nanostructures in the growth of InGaN/GaN multi-quantum wells D Biswas, A Mistry, PP Bera Optik 130, 1358-1361, 2017 | 2 | 2017 |
| Performance improvement of InGaN/GaN light-emitting diodes using parabolic quantum well A Mistry, JB Pal, H Karan Optics Communications, 130421, 2024 | | 2024 |
| Study on Enhancement of Optical Output of InxGa1-xN/GaN Parabolic Quantum Well LEDs, Varying Indium Compositions, and Well Widths D Bandyopadhyay, A Mistry, JB Pal Proceedings of International Conference on Industrial Instrumentation and …, 2022 | | 2022 |
| Performance Enhancement of InGaN/GaN Green QW LEDs with Different Interlayers and Doping in the Barriers A Mistry, D Biswas Computers and Devices for Communication: Proceedings of CODEC 2019, 484-489, 2021 | | 2021 |
| Non uniform distribution of indium in the InxGa1− xN/GaN quantum well is more advantageous for quantum well light emitting diodes A Gorai, A Mistry, D Biswas Optik 149, 22-27, 2017 | | 2017 |
| Explanations of the unusual photoluminescence observed in annealed InGaN/GaN multi quantum well D Biswas, PP Bera, A Mistry AIP Conference Proceedings 1661 (1), 2015 | | 2015 |
| Important inferences drawn from the unusual Photoluminescence of annealed and nonannealed InxGa1-xN/GaN Multi Quantum Wells D Biswas, A Mistry, PP Bera International Conference on Advanced Materials and Energy Technology (ICAMET …, 2014 | | 2014 |
| Significant improvement of InGaN GaN QW leds through modification of structure doping interlayer and annealing A Mistry Kolkata, 0 | | |
| Special features of the InxGa1-xN/GaN quantum wells outlined and established for optoelectronic designers D Biswas, A Mistry, PP Bera, S Panda, A Gorai relation 17, 18, 0 | | |
| Important Observations on the Annealing of Capped and Uncapped InXGa1-XN/GaN Quantum Wells D Biswas, A Mistry, PP Bera | | |
| IMPROVEMENT OF THE OPTICAL PROPERTIES OF InGaN/GaN QUANTUM WELL DIODES, USING DIFFERENT TYPES OF InGaN/InGaN STAGGERED QUANTUM WELLS D Biswas, A Gorai, A Mistry | | |
Dipan BandyopadhyayAssistant Professor of RCC INSTITUTE OF INFORMATION TECHNOLOGYVerified email at rcciit.org
