Light‐induced degradation in indium‐doped silicon C Möller, K Lauer physica status solidi (RRL)–Rapid Research Letters 7 (7), 461-464, 2013 | 52 | 2013 |
Influence of the feedstock purity on the solar cell efficiency S Meyer, S Wahl, A Molchanov, K Neckermann, C Möller, K Lauer, ... Solar energy materials and solar cells 130, 668-672, 2014 | 22 | 2014 |
Activation energies of the InSi‐Sii defect transitions obtained by carrier lifetime measurements K Lauer, C Möller, C Teßmann, D Schulze, NV Abrosimov physica status solidi c 14 (5), 1600033, 2017 | 16 | 2017 |
ASi-Sii-defect model of light-induced degradation in silicon C Möller, K Lauer Energy Procedia 55, 559-563, 2014 | 16 | 2014 |
Iron-boron pairing kinetics in illuminated p-type and in boron/phosphorus co-doped n-type silicon C Möller, T Bartel, F Gibaja, K Lauer Journal of Applied Physics 116 (2), 2014 | 15 | 2014 |
Calibration of excitonic photoluminescence to determine high aluminum concentrations in silicon K Lauer, C Möller, D Schulze, T Bartel, F Kirscht physica status solidi (RRL)–Rapid Research Letters 7 (4), 265-267, 2013 | 13 | 2013 |
Dynamics of iron-acceptor-pair formation in co-doped silicon T Bartel, F Gibaja, O Graf, D Gross, M Kaes, M Heuer, F Kirscht, C Möller, ... Applied Physics Letters 103 (20), 2013 | 12 | 2013 |
Discussion of ASi-Sii-Defect Model in Frame of Experimental Results on P Line in Indium Doped Silicon K Lauer, C Möller, D Schulze, C Ahrens, J Vanhellemont Solid State Phenomena 242, 90-95, 2016 | 10 | 2016 |
Identification of photoluminescence P line in indium doped silicon as InSi-Sii defect K Lauer, C Möller, D Schulze, C Ahrens AIP Advances 5 (1), 2015 | 10 | 2015 |
Determination of activation energy of the iron acceptor pair association and dissociation reaction K Lauer, C Möller, D Debbih, M Auge, D Schulze Solid State Phenomena 242, 230-235, 2016 | 9 | 2016 |
Low-temperature FTIR investigation of aluminum doped solar-grade silicon K Lauer, C Möller, T Bartel, F Kirscht Energy Procedia 55, 545-551, 2014 | 7 | 2014 |
Local detection of deep carrier traps in the pn-junction of silicon solar cells T Mchedlidze, L Scheffler, J Weber, M Herms, J Neusel, V Osinniy, ... Applied Physics Letters 103 (1), 2013 | 7 | 2013 |
Comparison of incentive models for grid-supporting flexibility usage of private charging infrastructure C Moeller, K Kotthaus, M Zdrallek, F Schweiger ETG congress 2021, 1-6, 2021 | 6 | 2021 |
Impact of a p-type solar cell process on the electrical quality of Czochralski silicon K Lauer, C Möller, K Neckermann, M Blech, M Herms, T Mchedlidze, ... Energy Procedia 38, 589-596, 2013 | 5 | 2013 |
Evolution of iron-containing defects during processing of Si solar cells T Mchedlidze, C Möller, K Lauer, J Weber Journal of Applied Physics 116 (24), 2014 | 4 | 2014 |
Impact of different electric vehicle charging models on distribution grid planning T Müller, SA Ali, M Becker, C Möller, M Zdrallek, E Boden, C Knoll IET Digital Library, 2021 | 3 | 2021 |
Tiny incident light angle sensor D Mitrenga, M Schaedel, S Voellmeke, KD Preuss, C Moeller MikroSystemTechnik 2017; Congress, 1-4, 2017 | 2 | 2017 |
On the trade-off between industrially feasible silicon surface preconditioning prior to interface passivation and iron contaminant removal effectiveness A Laades, U Stürzebecher, HP Sperlich, C Möller, K Lauer, A Lawerenz Solid State Phenomena 205, 47-52, 2014 | 2 | 2014 |
Windmill-like structure in Cz-Si M Herms, V Osinniy, M Kirpo, F Dreckschmidt, J Neusel, O Gybin, ... Energy Procedia 38, 80-85, 2013 | 2 | 2013 |
Charge carrier lifetime shift induced by temperature variation during a MWPCD measurement C Möller, K Lauer Energy Procedia 38, 153-160, 2013 | 2 | 2013 |