All-perovskite transparent high mobility field effect using epitaxial BaSnO3 and LaInO3 U Kim, C Park, T Ha, YM Kim, N Kim, C Ju, J Park, J Yu, JH Kim, K Char APL materials 3 (3), 2015 | 143 | 2015 |
High mobility field effect transistor based on BaSnO3 with Al2O3 gate oxide C Park, U Kim, CJ Ju, JS Park, YM Kim, K Char Applied Physics Letters 105 (20), 2014 | 121 | 2014 |
Large effects of dislocations on high mobility of epitaxial perovskite Ba0. 96La0. 04SnO3 films H Mun, U Kim, H Min Kim, C Park, T Hoon Kim, H Joon Kim, K Hoon Kim, ... Applied Physics Letters 102 (25), 2013 | 113 | 2013 |
High mobility BaSnO3 films and field effect transistors on non-perovskite MgO substrate J Shin, YM Kim, Y Kim, C Park, K Char Applied Physics Letters 109 (26), 2016 | 91 | 2016 |
Dopant-site-dependent scattering by dislocations in epitaxial films of perovskite semiconductor BaSnO3 U Kim, C Park, T Ha, R Kim, HS Mun, HM Kim, HJ Kim, TH Kim, N Kim, ... APL Materials 2 (5), 2014 | 75 | 2014 |
High-mobility BaSnO3 thin-film transistor with HfO2 gate insulator YM Kim, C Park, U Kim, C Ju, K Char Applied Physics Express 9 (1), 011201, 2015 | 66 | 2015 |
Room temperature ferromagnetism in monoclinic Mn-doped ZrO2 thin films N Hoa Hong, CK Park, AT Raghavender, O Ciftja, NS Bingham, MH Phan, ... Journal of Applied Physics 111 (7), 2012 | 55 | 2012 |
Conducting interface states at LaInO3/BaSnO3 polar interface controlled by Fermi level U Kim, C Park, YM Kim, J Shin, K Char APL Materials 4 (7), 2016 | 45 | 2016 |
Thermally stable pn-junctions based on a single transparent perovskite semiconductor BaSnO3 HM Kim, U Kim, C Park, H Kwon, K Char Apl Materials 4 (5), 2016 | 43 | 2016 |
High-k perovskite gate oxide BaHfO3 YM Kim, C Park, T Ha, U Kim, N Kim, J Shin, Y Kim, J Yu, JH Kim, K Char APL Materials 5 (1), 2017 | 36 | 2017 |
Thickness dependent magnetic properties of BiFeO3 thin films prepared by pulsed laser deposition AT Raghavender, NH Hong, C Park, MH Jung, KJ Lee, D Lee Materials Letters 65 (17-18), 2786-2788, 2011 | 24 | 2011 |
High temperature ferromagnetism in cubic Mn-doped ZrO2 thin films NH Hong, CK Park, AT Raghavender, A Ruyter, E Chikoidze, Y Dumont Journal of magnetism and magnetic materials 324 (19), 3013-3016, 2012 | 19 | 2012 |
High mobility field effect transistor of SnOx on glass using HfOx gate oxide C Ju, C Park, H Yang, U Kim, YM Kim, K Char Current Applied Physics 16 (3), 300-304, 2016 | 17 | 2016 |
Effect of annealing conditions on structural and magnetic properties of laser ablated copper ferrite thin films AT Raghavender, NH Hong, C Park, MH Jung, KJ Lee, D Lee Journal of magnetism and magnetic materials 324 (10), 1814-1817, 2012 | 10 | 2012 |
Band gap and mobility of epitaxial perovskite thin films J Shin, J Lim, T Ha, YM Kim, C Park, J Yu, JH Kim, K Char Physical Review Materials 2 (2), 021601, 2018 | 7 | 2018 |