| Magnetic memory driven by topological insulators H Wu, A Chen, P Zhang, H He, J Nance, C Guo, J Sasaki, T Shirokura, ... Nature communications 12 (1), 6251, 2021 | 84 | 2021 |
| Chiral symmetry breaking for deterministic switching of perpendicular magnetization by spin–orbit torque H Wu, J Nance, SA Razavi, D Lujan, B Dai, Y Liu, H He, B Cui, D Wu, ... Nano letters 21 (1), 515-521, 2020 | 84 | 2020 |
| Distinguishing the two-component anomalous hall effect from the topological Hall effect L Tai, B Dai, J Li, H Huang, SK Chong, KL Wong, H Zhang, P Zhang, ... ACS nano 16 (10), 17336-17346, 2022 | 30 | 2022 |
| Enhancement of spin-to-charge conversion efficiency in topological insulators by interface engineering H He, L Tai, D Wu, H Wu, A Razavi, K Wong, Y Liu, KL Wang APL Materials 9 (7), 2021 | 18 | 2021 |
| Electric field manipulation of spin chirality and skyrmion dynamic B Dai, D Wu, SA Razavi, S Xu, H He, Q Shu, M Jackson, F Mahfouzi, ... Science Advances 9 (7), eade6836, 2023 | 16 | 2023 |
| Spin–orbit torques in structures with asymmetric dusting layers A Razavi, H Wu, B Dai, H He, D Wu, K Wong, G Yu, KL Wang Applied Physics Letters 117 (18), 2020 | 16 | 2020 |
| Large spin to charge conversion in antiferromagnetic Weyl semimetal Mn3Sn T Yu, H Wu, H He, C Guo, C Fang, P Zhang, KL Wong, S Xu, X Han, ... APL Materials 9 (4), 2021 | 13 | 2021 |
| Current-induced Néel order switching facilitated by magnetic phase transition H Wu, H Zhang, B Wang, F Groß, CY Yang, G Li, C Guo, H He, K Wong, ... Nature communications 13 (1), 1629, 2022 | 12 | 2022 |
| Review of voltage-controlled magnetic anisotropy and magnetic insulator B Dai, M Jackson, Y Cheng, H He, Q Shu, H Huang, L Tai, K Wang Journal of Magnetism and Magnetic Materials 563, 169924, 2022 | 6 | 2022 |
| Conversion between spin and charge currents in topological-insulator/nonmagnetic-metal systems H He, L Tai, H Wu, D Wu, A Razavi, TA Gosavi, ES Walker, K Oguz, ... Physical Review B 104 (22), L220407, 2021 | 5 | 2021 |
| Edge magnetoplasmon dispersion and time-resolved plasmon transport in a quantum anomalous Hall insulator LA Martinez, G Qiu, P Deng, P Zhang, KG Ray, L Tai, MT Wei, H He, ... Physical Review Research 6 (1), 013081, 2024 | 3 | 2024 |
| Cryogenic in-memory computing using tunable chiral edge states Y Liu, A Lee, K Qian, P Zhang, H He, Z Ren, SK Cheung, Y Li, X Zhang, ... arXiv preprint arXiv:2209.09443, 2022 | 3 | 2022 |
| A Nonvolatile Compute-In-Memory Macro Using Voltage-Controlled MRAM and In-Situ Magnetic-to-Digital Converter VK Jacob, J Yang, H He, P Gupta, KL Wang, S Pamarti IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2023 | 2 | 2023 |
| Giant Hall Switching by Surface-State-Mediated Spin-Orbit Torque in a Hard Ferromagnetic Topological Insulator L Tai, H He, SK Chong, H Zhang, G Qiu, Y Li, HY Yang, TH Yang, X Dong, ... arXiv preprint arXiv:2306.05603, 2023 | 1 | 2023 |
| Distinguishing two-component anomalous Hall effect from topological Hall effect in magnetic topological insulator MnBi2Te4 L Tai, J Li, SK Chong, H Zhang, P Zhang, P Deng, C Eckberg, G Qiu, ... APS March Meeting Abstracts 2022, S54. 005, 2022 | 1 | 2022 |
| The First CMOS-Integrated Voltage-Controlled MRAM with 0.7 ns Switching Time H Suhail, H He, J Yang, Q Shu, CY Wang, SY Yang, YC Hsin, CY Shih, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | | 2023 |
| Analytical Array-Level Comparison of Read/Write Performance Between Voltage Controlled-MRAM and STT-MRAM H Suhail, J Yang, H He, KL Wang, S Pamarti 2023 IEEE 66th International Midwest Symposium on Circuits and Systems …, 2023 | | 2023 |
| Large spin to charge conversion in antiferromagnetic Weyl semimetal Mn T Yu, H Wu, H He, C Guo, C Fang, P Zhang, KL Wong, S Xu, X Han, ... | | 2021 |
