| Computational Study of Adsorption behavior of CH4N2O and CH3OH on Fe decorated MoS2 monolayer B Chettri, A Thapa, SK Das, P Chettri, B Sharma Solid State Electronics Letters 3, 32-41, 2021 | 11 | 2021 |
| Ab-initio study of LD-HfO2, Al2O3, La2O3 and h-BN for application as dielectrics in MTJ memory device B Sharma, A Thapa, A Sarkar Superlattices and Microstructures 150, 106753, 2021 | 10 | 2021 |
| First principle insight into co-doped MoS2 for sensing NH3 and CH4 B Chettri, A Thapa, SK Das, P Chettri, B Sharma Facta Universitatis, Series: Electronics and Energetics 35 (1), 043-059, 2022 | 9 | 2022 |
| First Principle Study of MoS2 adsorbed Transition Metal for Sensing NH3 and CH4 P Karki, B Chettri, A Thapa, P Chettri, B Sharma 2021 Devices for Integrated Circuit (DevIC), 659-661, 2021 | 6 | 2021 |
| First Principle Study of MoS2 adsorbed Transition Metal for Sensing Urea and Methanol P Sharma, M Lepcha, B Chettri, A Thapa, P Chettri, B Sharma 2021 Devices for Integrated Circuit (DevIC), 655-658, 2021 | 5 | 2021 |
| Performance analysis of Ni3GeFe2/Fe3GeTe2 composites as ferromagnetic layer in MTJ memory devices B Chettri, B Sharma, A Thapa, P Chettri, B Sharma 2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS), 494-499, 2020 | 2 | 2020 |
| Stability Performance Comparison of a MTJ Memory Device Using Low-Dimensional HfO2, A12O3, La2O3 and h-BN as Composite Dielectric A Thapa, CK Sarkar, B Sharma 2018 IEEE Electron Devices Kolkata Conference (EDKCON), 642-646, 2018 | 2 | 2018 |
| Comparative computational study of LD-HfO2 and TiO2 as layered dilectrics in RRAM D Chettri, A Thapa, S Rai, P Chettri, CK Sarkar, B Sharma 2019 Devices for Integrated Circuit (DevIC), 470-473, 2019 | 1 | 2019 |
| Computational Study of the Electrical Properties of LD-LaSrMnO3 for Usage as Ferromagnetic Layer in MTJ Memory Device A Thapa, PC Pradhan, B Sharma Advances in Communication, Devices and Networking: Proceedings of ICCDN 2020 …, 2022 | | 2022 |
| Computational Study of the Electrical Properties as Ferromagnetic of LD-LaSrMnO Layer in MTJ 3 for Memory Usage Device A Thapa, PC Pradhan, B Sharma Advances in Communication, Devices and Networking: Proceedings of ICCDN 2020 …, 2021 | | 2021 |
| Computational Analysis and First Principle Study of Electrical and Optical Properties of Fe Doped SWBNNT and its Application A Thapa, B Chettri, A Sarkar, PC Pradhan, B Sharma | | 2021 |
| Analysis of electrical properties of unpolarized/polarized CNT-BNNT-CNT for varying lengths of BNNT IK Nepal, CT Bhutia, A Thapa, B Chettri, SK Das, B Sharma 2021 Devices for Integrated Circuit (DevIC), 652-654, 2021 | | 2021 |
