| Vertical Ga2O3 Schottky Barrier Diodes With Small-Angle Beveled Field Plates: A Baliga’s Figure-of-Merit of 0.6 GW/cm2 N Allen, M Xiao, X Yan, K Sasaki, MJ Tadjer, J Ma, R Zhang, H Wang, ... IEEE Electron Device Letters 40 (9), 1399-1402, 2019 | 174 | 2019 |
| Surge-energy and overvoltage ruggedness of P-gate GaN HEMTs R Zhang, JP Kozak, M Xiao, J Liu, Y Zhang IEEE Transactions on Power Electronics 35 (12), 13409-13419, 2020 | 105 | 2020 |
| 1.2-kV vertical GaN fin-JFETs: High-temperature characteristics and avalanche capability J Liu, M Xiao, R Zhang, S Pidaparthi, H Cui, A Edwards, M Craven, ... IEEE Transactions on Electron Devices 68 (4), 2025-2032, 2021 | 88 | 2021 |
| Packaged Ga2O3 Schottky Rectifiers With Over 60-A Surge Current Capability M Xiao, B Wang, J Liu, R Zhang, Z Zhang, C Ding, S Lu, K Sasaki, GQ Lu, ... IEEE Transactions on Power Electronics 36 (8), 8565-8569, 2021 | 88 | 2021 |
| True breakdown voltage and overvoltage margin of GaN power HEMTs in hard switching JP Kozak, R Zhang, Q Song, J Liu, W Saito, Y Zhang IEEE Electron Device Letters 42 (4), 505-508, 2021 | 62 | 2021 |
| Stability, reliability, and robustness of GaN power devices: A review JP Kozak, R Zhang, M Porter, Q Song, J Liu, B Wang, R Wang, W Saito, ... IEEE Transactions on Power Electronics 38 (7), 8442-8471, 2023 | 60 | 2023 |
| Surge current and avalanche ruggedness of 1.2-kV vertical GaN pn diodes J Liu, R Zhang, M Xiao, S Pidaparthi, H Cui, A Edwards, L Baubutr, ... IEEE Transactions on Power Electronics 36 (10), 10959-10964, 2021 | 55 | 2021 |
| Trap-mediated avalanche in large-area 1.2 kV vertical GaN pn diodes J Liu, M Xiao, R Zhang, S Pidaparthi, C Drowley, L Baubutr, A Edwards, ... IEEE Electron Device Letters 41 (9), 1328-1331, 2020 | 52 | 2020 |
| Design and simulation of GaN superjunction transistors with 2-DEG channels and fin channels M Xiao, R Zhang, D Dong, H Wang, Y Zhang IEEE Journal of Emerging and Selected Topics in Power Electronics 7 (3 …, 2019 | 52 | 2019 |
| Dynamic breakdown voltage of GaN power HEMTs R Zhang, JP Kozak, Q Song, M Xiao, J Liu, Y Zhang 2020 IEEE International Electron Devices Meeting (IEDM), 23.3. 1-23.3. 4, 2020 | 51 | 2020 |
| Robustness of cascode GaN HEMTs in unclamped inductive switching Q Song, R Zhang, JP Kozak, J Liu, Q Li, Y Zhang IEEE Transactions on Power Electronics 37 (4), 4148-4160, 2021 | 44 | 2021 |
| Third quadrant conduction loss of 1.2–10 kV SiC MOSFETs: Impact of gate bias control R Zhang, X Lin, J Liu, S Mocevic, D Dong, Y Zhang IEEE Transactions on Power Electronics 36 (2), 2033-2043, 2020 | 35 | 2020 |
| Breakthrough short circuit robustness demonstrated in vertical GaN fin JFET R Zhang, J Liu, Q Li, S Pidaparthi, A Edwards, C Drowley, Y Zhang IEEE Transactions on Power Electronics 37 (6), 6253-6258, 2021 | 34 | 2021 |
| 5 kV multi-channel AlGaN/GaN power Schottky barrier diodes with junction-fin-anode M Xiao, Y Ma, Z Du, X Yan, R Zhang, K Cheng, K Liu, A Xie, E Beam, ... 2020 IEEE International Electron Devices Meeting (IEDM), 5.4. 1-5.4. 4, 2020 | 34 | 2020 |
| Degradation of SiC MOSFETs under high-bias switching events JP Kozak, R Zhang, J Liu, KDT Ngo, Y Zhang IEEE Journal of Emerging and Selected Topics in Power Electronics 10 (5 …, 2021 | 28 | 2021 |
| Degradation and recovery of GaN HEMTs in overvoltage hard switching near breakdown voltage JP Kozak, Q Song, R Zhang, Y Ma, J Liu, Q Li, W Saito, Y Zhang IEEE Transactions on Power Electronics 38 (1), 435-446, 2022 | 27 | 2022 |
| Robust through-fin avalanche in vertical GaN Fin-JFET with soft failure mode R Zhang, J Liu, Q Li, S Pidaparthi, A Edwards, C Drowley, Y Zhang IEEE Electron Device Letters 43 (3), 366-369, 2022 | 24 | 2022 |
| Tuning avalanche path in vertical GaN JFETs by gate driver design J Liu, R Zhang, M Xiao, S Pidaparthi, H Cui, A Edwards, C Drowley, ... IEEE Transactions on Power Electronics 37 (5), 5433-5443, 2021 | 22 | 2021 |
| Surge energy robustness of GaN gate injection transistors R Zhang, JP Kozak, J Liu, M Xiao, Y Zhang 2020 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2020 | 18 | 2020 |
| Failure mechanisms of cascode GaN HEMTs under overvoltage and surge energy events Q Song, R Zhang, JP Kozak, J Liu, Q Li, Y Zhang 2021 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2021 | 17 | 2021 |
Yuhao ZhangCPES, Virginia TechVerified email at vt.edu
