Band-Engineered Low PMOS VT with High-K/Metal Gates Featured in a Dual Channel CMOS Integration Scheme HR Harris, P Kalra, P Majhi, M Hussain, D Kelly, J Oh, D He, C Smith, ...
2007 IEEE Symposium on VLSI Technology, 154-155, 2007
70 2007 Protein-mediated nanocrystal assembly for flash memory fabrication S Tang, C Mao, Y Liu, DQ Kelly, SK Banerjee
IEEE transactions on electron devices 54 (3), 433-438, 2007
65 2007 Improved performance of SiGe nanocrystal memory with VARIOT tunnel barrier Y Liu, S Dey, S Tang, DQ Kelly, J Sarkar, SK Banerjee
IEEE transactions on electron devices 53 (10), 2598-2602, 2006
32 2006 Improved hot-electron reliability in strained-Si nMOS D Onsongo, DQ Kelly, S Dey, RL Wise, CR Cleavelin, SK Banerjee
IEEE transactions on electron devices 51 (12), 2193-2199, 2004
30 2004 Molecular-beam epitaxy growth of device-compatible GaAs on silicon substrates with thin step-graded buffer layers for high- III-V metal-oxide … MM Oye, D Shahrjerdi, I Ok, JB Hurst, SD Lewis, S Dey, DQ Kelly, S Joshi, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2007
25 2007 Nanocrystal flash memory fabricated with protein-mediated assembly S Tang, C Mao, Y Liu, DQ Kelly, SK Banerjee
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005
25 2005 Thin germanium-carbon alloy layers grown directly on silicon for metal-oxide-semiconductor device applications DQ Kelly, I Wiedmann, JP Donnelly, SV Joshi, S Dey, SK Banerjee, ...
Applied physics letters 88 (15), 2006
21 2006 High Performance pMOSFETs Using Si/Si1-x Gex /Si Quantum Wells with High-k/Metal Gate Stacks and Additive Uniaxial Strain for 22 nm Technology Node S Suthram, P Majhi, G Sun, P Kalra, HR Harris, KJ Choi, D Heh, J Oh, ...
2007 IEEE International Electron Devices Meeting, 727-730, 2007
18 2007 Mechanisms limiting EOT scaling and gate leakage currents of high-k/metal gate stacks directly on SiGe and a method to enable sub-1nm EOT J Huang, PD Kirsch, J Oh, SH Lee, J Price, P Majhi, HR Harris, DC Gilmer, ...
2008 Symposium on VLSI Technology, 82-83, 2008
13 2008 Demonstration of High-Performance PMOSFETs Using – – Quantum Wells With High- /Metal-Gate Stacks P Majhi, P Kalra, R Harris, KJ Choi, D Heh, J Oh, D Kelly, R Choi, BJ Cho, ...
IEEE Electron Device Letters 29 (1), 99-101, 2007
13 2007 Carbon segregation as a strain relaxation mechanism in thin germanium-carbon layers deposited directly on silicon DI Garcia-Gutierrez, M José-Yacamán, S Lu, DQ Kelly, SK Banerjee
Journal of applied physics 100 (4), 2006
12 2006 Thin germanium–carbon layers deposited directly on silicon for metal–oxide–semiconductor devices DQ Kelly, I Wiedmann, DI Garcia-Gutierrez, M Jose-Yacaman, ...
Semiconductor science and technology 22 (1), S204, 2006
11 2006 BC high-/spl kappa//metal gate Ge/C alloy pMOSFETs fabricated directly on Si (100) substrates DQ Kelly, JP Donnelly, S Dey, SV Joshi, DIG Gutiérrez, MJ Yacamán, ...
IEEE electron device letters 27 (4), 265-268, 2006
11 2006 Negative Differential Resistance in Buried-Channel pMOSFETs ES Liu, DQ Kelly, JP Donnelly, E Tutuc, SK Banerjee
IEEE electron device letters 30 (2), 136-138, 2009
7 2009 Interface characteristics of ZrO2 high-k gate dielectrics on epitaxial Ge capacitor layers after thermal desorption of Ge native oxide and Ge nitridation J Oh, P Majhi, HH Tseng, R Jammy, DQ Kelly, SK Banerjee, JC Campbell
Thin Solid Films 516 (12), 4107-4110, 2008
7 2008 Considerations for evaluating hot-electron reliability of strained Si n-channel MOSFETs DQ Kelly, S Dey, D Onsongo, SK Banerjee
Microelectronics Reliability 45 (7-8), 1033-1040, 2005
7 2005 High mobility strained Ge PMOSFETs with high-[kappa] gate dielectric and metal gate on Si substrate JP Donnelly, DQ Kelly, DI Garcia-Gutierrez, M Jose-Yacaman, ...
Electronics Letters 44 (3), 1, 2008
5 2008 Metal-oxide-semiconductor devices based on epitaxial germanium-carbon layers grown directly on silicon substrates by ultra-high-vacuum chemical vapor deposition DQ Kelly
The University of Texas at Austin, 2006
5 2006 Enhanced hot-electron performance of strained Si NMOS over unstrained Si DQ Kelly, D Onsongo, S Dey, R Wise, R Cleavelin, SK Banerjee
2004 IEEE International Reliability Physics Symposium. Proceedings, 455-462, 2004
5 2004 Interrelationship between electrical and physical properties of subcritical Si-Ge layers grown directly on silicon for short channel high-performance pMOSFETs DQ Kelly, S Lee, P Kalra, R Harris, J Oh, P Kirsch, SK Banerjee, P Majhi, ...
Microelectronic engineering 84 (9-10), 2054-2057, 2007
2 2007