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Jeong Hwan Han
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Al‐Doped TiO2 Films with Ultralow Leakage Currents for Next Generation DRAM Capacitors
SK Kim, GJ Choi, SY Lee, M Seo, SW Lee, JH Han, HS Ahn, S Han, ...
Advanced Materials 20 (8), 1429-1435, 2008
3512008
Capacitors with an equivalent oxide thickness of< 0.5 nm for nanoscale electronic semiconductor memory
SK Kim, SW Lee, JH Han, B Lee, S Han, CS Hwang
Advanced Functional Materials 20 (18), 2989-3003, 2010
2592010
Highly improved uniformity in the resistive switching parameters of TiO2 thin films by inserting Ru nanodots.
JH Yoon, JH Han, JS Jung, W Jeon, GH Kim, SJ Song, JY Seok, KJ Yoon, ...
Advanced Materials (Deerfield Beach, Fla.) 25 (14), 1987-1992, 2013
2002013
Atomic Layer Deposition of SrTiO3 Thin Films with Highly Enhanced Growth Rate for Ultrahigh Density Capacitors
SW Lee, JH Han, S Han, W Lee, JH Jang, M Seo, SK Kim, C Dussarrat, ...
Chemistry of Materials 23 (8), 2227-2236, 2011
1592011
Enhanced electrical properties of SrTiO3 thin films grown by atomic layer deposition at high temperature for dynamic random access memory applications
SW Lee, OS Kwon, JH Han, CS Hwang
Applied physics letters 92 (22), 2008
1482008
Fabrication of high-performance p-type thin film transistors using atomic-layer-deposited SnO films
SH Kim, IH Baek, DH Kim, JJ Pyeon, TM Chung, SH Baek, JS Kim, ...
Journal of Materials Chemistry C 5 (12), 3139-3145, 2017
1012017
Investigation on the growth initiation of Ru thin films by atomic layer deposition
SK Kim, JH Han, GH Kim, CS Hwang
Chemistry of materials 22 (9), 2850-2856, 2010
962010
Growth of p-Type Tin(II) Monoxide Thin Films by Atomic Layer Deposition from Bis(1-dimethylamino-2-methyl-2propoxy)tin and H2O
JH Han, YJ Chung, BK Park, SK Kim, HS Kim, CG Kim, TM Chung
Chemistry of Materials 26 (21), 6088-6091, 2014
952014
Atomic Layer Deposition of SrTiO3 Films with Cyclopentadienyl-Based Precursors for Metal–Insulator–Metal Capacitors
W Lee, JH Han, W Jeon, YW Yoo, SW Lee, SK Kim, CH Ko, ...
Chemistry of Materials 25 (6), 953-961, 2013
872013
Improvement in the leakage current characteristic of metal-insulator-metal capacitor by adopting RuO2 film as bottom electrode
JH Han, S Han, W Lee, SW Lee, SK Kim, J Gatineau, C Dussarrat, ...
Applied Physics Letters 99 (2), 2011
812011
Chemical Vapor Deposition of Ru Thin Films with an Enhanced Morphology, Thermal Stability, and Electrical Properties Using a RuO4 Precursor
JH Han, SW Lee, GJ Choi, SY Lee, CS Hwang, C Dussarrat, J Gatineau
Chemistry of Materials 21 (2), 207-209, 2009
812009
Synthesis of SnS thin films by atomic layer deposition at low temperatures
IH Baek, JJ Pyeon, YG Song, TM Chung, HR Kim, SH Baek, JS Kim, ...
Chemistry of Materials 29 (19), 8100-8110, 2017
802017
Atomic layer deposition and electrical properties of SrTiO3 thin films grown using Sr (C11H19O2) 2, Ti (Oi-C3H7) 4, and H2O
OS Kwon, SW Lee, JH Han, CS Hwang
Journal of the Electrochemical Society 154 (6), G127, 2007
732007
Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido …
HY Kim, EA Jung, G Mun, RE Agbenyeke, BK Park, JS Park, SU Son, ...
ACS Applied Materials & Interfaces 8 (40), 26924-26931, 2016
692016
High-performance thin-film transistors of quaternary indium–zinc–tin oxide films grown by atomic layer deposition
IH Baek, JJ Pyeon, SH Han, GY Lee, BJ Choi, JH Han, TM Chung, ...
ACS applied materials & interfaces 11 (16), 14892-14901, 2019
642019
Influences of metal, non-metal precursors, and substrates on atomic layer deposition processes for the growth of selected functional electronic materials
SW Lee, BJ Choi, T Eom, JH Han, SK Kim, SJ Song, W Lee, CS Hwang
Coordination Chemistry Reviews 257 (23-24), 3154-3176, 2013
622013
A theoretical model for Schottky diodes for excluding the sneak current in cross bar array resistive memory
GH Kim, KM Kim, JY Seok, HJ Lee, DY Cho, JH Han, CS Hwang
Nanotechnology 21 (38), 385202, 2010
622010
Growth of RuO2 Thin Films by Pulsed-Chemical Vapor Deposition Using RuO4 Precursor and 5% H2 Reduction Gas
JH Han, SW Lee, SK Kim, S Han, CS Hwang, C Dussarrat, J Gatineau
Chemistry of Materials 22 (20), 5700-5706, 2010
612010
Phase-controlled SnO2 and SnO growth by atomic layer deposition using Bis (N-ethoxy-2, 2-dimethyl propanamido) tin precursor
HY Kim, JH Nam, SM George, JS Park, BK Park, GH Kim, DJ Jeon, ...
Ceramics International 45 (4), 5124-5132, 2019
512019
Four‐Bits‐Per‐Cell Operation in an HfO2‐Based Resistive Switching Device
GH Kim, H Ju, MK Yang, DK Lee, JW Choi, JH Jang, SG Lee, IS Cha, ...
Small 13 (40), 1701781, 2017
492017
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