| Germanium-vacancy single color centers in diamond T Iwasaki, F Ishibashi, Y Miyamoto, Y Doi, S Kobayashi, T Miyazaki, ... Scientific reports 5 (1), 12882, 2015 | 393 | 2015 |
| Tin-vacancy quantum emitters in diamond T Iwasaki, Y Miyamoto, T Taniguchi, P Siyushev, MH Metsch, F Jelezko, ... Physical review letters 119 (25), 253601, 2017 | 309 | 2017 |
| Excimer laser-induced temperature field in melting and resolidification of silicon thin films M Hatano, S Moon, M Lee, K Suzuki, CP Grigoropoulos Journal of Applied Physics 87 (1), 36-43, 2000 | 247 | 2000 |
| Semiconductor device and method for manufacturing the same T Kawamura, T Sato, M Hatano, H Uchiyama US Patent 7,977,675, 2011 | 201 | 2011 |
| Laser annealing apparatus, TFT device and annealing method of the same M Hongo, S Uto, M Nomoto, T Nakata, M Hatano, S Yamaguchi, M Ohkura US Patent 6,943,086, 2005 | 150 | 2005 |
| Semiconductor memory device and manufacturing method thereof Y Sasago, R Takemura, M Kinoshita, T Mine, A Shima, H Matsuoka, ... US Patent App. 12/430,539, 2009 | 135 | 2009 |
| Perfect selective alignment of nitrogen-vacancy centers in diamond T Fukui, Y Doi, T Miyazaki, Y Miyamoto, H Kato, T Matsumoto, T Makino, ... Applied Physics Express 7 (5), 055201, 2014 | 131 | 2014 |
| Photoluminescence excitation spectroscopy of SiV− and GeV− color center in diamond S Häußler, G Thiering, A Dietrich, N Waasem, T Teraji, J Isoya, T Iwasaki, ... New Journal of Physics 19 (6), 063036, 2017 | 118 | 2017 |
| Thin film semiconductor device, polycrystalline semiconductor thin film production process and production apparatus M Hatano, S Yamaguchi, Y Kimura, SK Park US Patent 6,756,614, 2004 | 105 | 2004 |
| Magnetometer with nitrogen-vacancy center in a bulk diamond for detecting magnetic nanoparticles in biomedical applications A Kuwahata, T Kitaizumi, K Saichi, T Sato, R Igarashi, T Ohshima, ... Scientific reports 10 (1), 2483, 2020 | 103 | 2020 |
| Method for manufacturing display device T Hattori, T Kuranaga, N Okada, M Hatano US Patent App. 13/114,074, 2011 | 101 | 2011 |
| Thermal conductivity of amorphous silicon thin films S Moon, M Hatano, M Lee, CP Grigoropoulos International Journal of Heat and Mass Transfer 45 (12), 2439-2447, 2002 | 99 | 2002 |
| A novel self-aligned gate-overlapped LDD poly-Si TFT with high reliability and performance M Hatano, H Akimoto, T Sakai International Electron Devices Meeting. IEDM Technical Digest, 523-526, 1997 | 99 | 1997 |
| Direct nanoscale sensing of the internal electric field in operating semiconductor devices using single electron spins T Iwasaki, W Naruki, K Tahara, T Makino, H Kato, M Ogura, D Takeuchi, ... ACS nano 11 (2), 1238-1245, 2017 | 97 | 2017 |
| Display device T Kawamura, T Sato, M Hatano US Patent 7,737,517, 2010 | 96 | 2010 |
| Spectroscopic investigations of negatively charged tin-vacancy centres in diamond J Görlitz, D Herrmann, G Thiering, P Fuchs, M Gandil, T Iwasaki, ... New Journal of Physics 22 (1), 013048, 2020 | 95 | 2020 |
| 600 V Diamond Junction Field-Effect Transistors Operated at 200 T Iwasaki, J Yaita, H Kato, T Makino, M Ogura, D Takeuchi, H Okushi, ... IEEE Electron Device Letters 35 (2), 241-243, 2013 | 93 | 2013 |
| Thin film crystal growth by laser annealing CP Grigoropoulos, M Hatano, MH Lee, SJ Moon US Patent 6,451,631, 2002 | 92 | 2002 |
| Relationship between fluence gradient and lateral grain growth in spatially controlled excimer laser crystallization of amorphous silicon films M Lee, S Moon, M Hatano, K Suzuki, CP Grigoropoulos Journal of applied physics 88 (9), 4994-4999, 2000 | 86 | 2000 |
| Thin film transistor S Yamaguchi, M Hatano, T Shiba, Y Kimura, SK Park US Patent 6,501,095, 2002 | 82 | 2002 |
