| Burying non-radiative defects in InGaN underlayer to increase InGaN/GaN quantum well efficiency C Haller, JF Carlin, G Jacopin, D Martin, R Butté, N Grandjean Applied Physics Letters 111 (26), 262101, 2017 | 130 | 2017 |
| GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells C Haller, JF Carlin, G Jacopin, W Liu, D Martin, R Butté, N Grandjean Applied Physics Letters 113 (11), 111106, 2018 | 114 | 2018 |
| Extended and quasi-continuous tuning of quantum cascade lasers using superstructure gratings and integrated heaters Y Bidaux, A Bismuto, C Tardy, R Terazzi, T Gresch, S Blaser, A Muller, ... Applied Physics Letters 107 (22), 221108, 2015 | 41 | 2015 |
| Extended tuning of mid-ir quantum cascade lasers using integrated resistive heaters A Bismuto, Y Bidaux, C Tardy, R Terazzi, T Gresch, J Wolf, S Blaser, ... Optics express 23 (23), 29715-29722, 2015 | 39 | 2015 |
| InAlN underlayer for near ultraviolet InGaN based light emitting diodes C Haller, JF Carlin, M Mosca, MD Rossell, R Erni, N Grandjean Applied Physics Express 12 (3), 034002, 2019 | 37 | 2019 |
| InGaN laser diode with metal-free laser ridge using n+-GaN contact layers M Malinverni, C Tardy, M Rossetti, A Castiglia, M Duelk, C Vélez, D Martin, ... Applied Physics Express 9 (6), 061004, 2016 | 35 | 2016 |
| Defect incorporation in In-containing layers and quantum wells: experimental analysis via deep level profiling and optical spectroscopy F Piva, C de Santi, A Caria, C Haller, JF Carlin, M Mosca, G Meneghesso, ... Journal of Physics D: Applied Physics, 2020 | 23 | 2020 |
| Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes AY Polyakov, C Haller, NB Smirnov, AS Shiko, IV Shchemerov, ... Journal of Applied Physics 126 (12), 125708, 2019 | 21 | 2019 |
| Impact of defects on Auger recombination in c-plane InGaN/GaN single quantum well in the efficiency droop regime W Liu, C Haller, Y Chen, T Weatherley, JF Carlin, G Jacopin, R Butté, ... Applied Physics Letters 116 (22), 222106, 2020 | 20 | 2020 |
| An experimental study of noise in mid-infrared quantum cascade lasers of different designs S Schilt, L Tombez, C Tardy, A Bismuto, S Blaser, R Maulini, R Terazzi, ... Applied Physics B 119 (1), 189-201, 2015 | 20 | 2015 |
| GaN buffer growth temperature and efficiency of InGaN/GaN quantum wells: The critical role of nitrogen vacancies at the GaN surface Y Chen, C Haller, W Liu, SY Karpov, JF Carlin, N Grandjean Applied Physics Letters 118 (11), 111102, 2021 | 19 | 2021 |
| Frequency Tuning and Modulation of a Quantum Cascade Laser with an Integrated Resistive Heater K Gürel, S Schilt, A Bismuto, Y Bidaux, C Tardy, S Blaser, T Gresch, ... Photonics 3 (3), 47, 2016 | 11 | 2016 |
| Frequency ageing and noise evolution in a distributed feedback quantum cascade laser measured over a two-month period S Schilt, L Tombez, C Tardy, A Bismuto, S Blaser, R Maulini, R Terazzi, ... IEEE Journal of Selected Topics in Quantum Electronics 21 (6), 68-73, 2015 | 7 | 2015 |
| Vernier effect dbr lasers incorporating integrated tuning elements RM Audet, MA Arbore, A Bismuto, Y Bidaux, C Tardy, T Gresch, ... US Patent App. 15/570,683, 2018 | 6* | 2018 |
| Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers AY Polyakov, C Haller, R Butté, NB Smirnov, LA Alexanyan, AI Kochkova, ... Journal of Alloys and Compounds 845, 156269, 2020 | 5 | 2020 |
| Effects of 5 MeV electron irradiation on deep traps and electroluminescence from near-UV InGaN/GaN single quantum well light-emitting diodes with and without InAlN superlattice … AY Polyakov, C Haller, R Butté, NB Smirnov, LA Alexanyan, AS Shikoh, ... Journal of Physics D: Applied Physics 53 (44), 445111, 2020 | 5 | 2020 |
| Characterization of a new frequency tuning and modulation mechanism for spectroscopy in a quantum cascade laser K Gürel, S Schilt, A Bismuto, Y Bidaux, C Tardy, S Blaser, T Gresch, ... 2016 Conference on Lasers and Electro-Optics (CLEO), 1-2, 2016 | 2 | 2016 |
| Elucidating the role of the InGaN UL in the efficiency of InGaN based light-emitting diodes C Haller EPFL, 2019 | 1 | 2019 |
| Point defects and blue LED efficiency: the critical role of indium T Weatherley, W Liu, C Haller, Y Chen, DTL Alexander, JF Carlin, R Butté, ... Light-Emitting Devices, Materials, and Applications XXV 11706, 1170609, 2021 | | 2021 |
| How does an In-containing underlayer prevent the propagation of defects in InGaN QW LEDs?: identification of SRH centers and modeling of trap profile F Piva, C De Santi, A Caria, M Buffolo, C Haller, JF Carlin, M Mosca, ... Gallium Nitride Materials and Devices XVI 11686, 116861X, 2021 | | 2021 |
Alfredo BismutoSenior Technologist @ FacebookVerified email at fb.com
