| Study on inter band and inter sub-band optical transitions with varying InAs/InGaAs sub-monolayer quantum dot heterostructure stacks grown by molecular beam epitaxy SR Shriram, R Kumar, D Panda, J Saha, B Tongbram, MR Mantri, SA Gazi, ... IEEE Transactions on Nanotechnology 19, 601-608, 2020 | 10 | 2020 |
| The role and growth of strain–reducing layer by molecular-beam epitaxy in a multi–stack InAs/(In, Ga) As sub-monolayer quantum dot heterostructure SR Shriram, D Panda, R Kumar, J Saha, B Tongbram, MR Mantri, SA Gazi, ... Optical Materials 114, 110817, 2021 | 8 | 2021 |
| In-Situ Tailoring of Vertically Coupled InAs pip Quantum-Dot Infrared Photodetectors: Toward Homogeneous Dot Size Distribution and Minimization of In–Ga Intermixing S Dongre, S Paul, S Mondal, R Kumar, D Panda, SA Gazi, D Das, ... ACS Applied Electronic Materials 2 (5), 1243-1253, 2020 | 7 | 2020 |
| Novel approach for augmented carrier transfer and reduced Fermi level pinning effect in InAs surface quantum dots D Panda, MR Mantri, R Kumar, D Das, R Saha, S Chakrabarti Applied Surface Science 607, 154948, 2023 | 4 | 2023 |
| Improved carrier transfer in vertically coupled surface and buried InAs Stranski-Krastanov quantum dot system via ex-situ surface state passivation MR Mantri, D Panda, D Das, S Mondal, S Paul, SA Gazi, R Kumar, ... Journal of Luminescence 226, 117470, 2020 | 4 | 2020 |
| Optimization of vertical strain coupling in InAs/GaAs pip quantum dot infrared photodetectors with applied growth strategy S Dongre, S Paul, S Mondal, D Panda, SR Shriram, MR Mantri, SA Gazi, ... Journal of Luminescence 226, 117499, 2020 | 3 | 2020 |
| Surfactant free, easy, low cost, and large scale hydrothermal synthesis and characterization of CZTS ink for photovoltaic utility N Pandey, S Prabhu, D Punetha, MR Mantri, S Chakrabarti New Concepts in Solar and Thermal Radiation Conversion V 12668, 53-57, 2023 | 1 | 2023 |
| Improvement in Performance of InAs Surface Quantum Dot Heterostructure Based H2S Gas Sensor by Introducing Buried Quantum Dot Layer MR Mantri, DP Panda, D Punetha, SK Pandey, VP Singh, SK Pandey, ... IEEE Sensors Journal, 2023 | 1 | 2023 |
| The enhancement in luminescence property of chemically passivated near surface quantum well and quantum dots D Das, MR Mantri, D Panda, S Paul, S Mondal, AV Pansare, ... Low-Dimensional Materials and Devices 2019 11085, 166-172, 2019 | 1 | 2019 |
| Optical and structural investigation of ex-situ passivated strain coupled InAs surface quantum dots D Das, MR Mantri, D Panda, S Paul, S Mondal, AV Pansare, ... Low-Dimensional Materials and Devices 2019 11085, 158-165, 2019 | 1 | 2019 |
| Investigation of strain profile and band-alignment study in InAs/GaAsSb quantum dot heterostructure with varying Sb content FSA Sabiha, R Kumar, R Gourishetty, R Saha, MR Mantri, A Kumar, ... Infrared Sensors, Devices, and Applications XIII 12687, 147-154, 2023 | | 2023 |
| Analysis of optical properties and reduced stain estimation in InAs/InGaAsSb quantum dot heterostructure with the variation of growth rate R Saha, FSA Sabiha, R Gourishetty, MR Mantri, A Kumar, S Chakrabarti Infrared Sensors, Devices, and Applications XIII 12687, 141-146, 2023 | | 2023 |
| In-situ tailoring of band alignment between strain-coupled surface and buried InAs/GaAs quantum dots for sensor applications MR Mantri, DP Panda, R Saha, S Chakrabarti Low-Dimensional Materials and Devices 2023 12651, 49-58, 2023 | | 2023 |
| A theoretical study on strain and optical property of InAs SK quantum dot with varying capping in SK-SML coupled surface quantum dot heterostructure MR Mantri, DP Panda, R Kumar, S Choudhary, S Chakrabarti Low-Dimensional Materials and Devices 2023 12651, 59-64, 2023 | | 2023 |
| A comparative study of single layer InAs SK, SML, and coupled SK-on-SML QDs heterostructure by incorporating InGaAsSb (Type-II) as capping layer S Choudhary, R Kumar, MR Mantri, A Dutta, S Chakrabarti Physics and Simulation of Optoelectronic Devices XXX 11995, 165-173, 2022 | | 2022 |
| Effect of vertical induced strain on growth kinetics of self-assembled epitaxially grown InAs surface quantum dots MR Mantri, D Panda, D Das, R Kumar, SA Gazi, S Chakrabarti Low-Dimensional Materials and Devices 2020 11465, 104-110, 2020 | | 2020 |
| Enhanced performance of InAs/InGaAs dot-in-well heterostructure through varying capping thickness A Kumar, S Venugopal, D Panda, MR Mantri, A Mandal, S Chakrabarti Low-Dimensional Materials and Devices 2020 11465, 151-156, 2020 | | 2020 |
| Impact of growth rate variabilities of quantum dots and capping layer on photoluminescence of epitaxially grown inAs quantum dots MR Mantri, D Panda, SA Gazi, S Dongre, S Chakrabarti Quantum Dots, Nanostructures, and Quantum Materials: Growth …, 2020 | | 2020 |
| Fabrication and Characterization of cadmium Sulphide Metal-Insulator-Metal Structure M Manas,Ranajan, B Sital, M Sandipan 1st National Conference on Device and Circuits (IEEE ED-NIST), Page no:53-57, 2015 | | 2015 |
Debi Prasad Pandaimec, BelgiumVerified email at imec.be
