| Two-stage GaN HEMT amplifier with gate–source voltage shaping for efficiency versus bandwidth enhancements A Ramadan, T Reveyrand, A Martin, JM Nebus, P Bouysse, L Lapierre, ... IEEE Transactions on Microwave Theory and Techniques 59 (3), 699-706, 2010 | 36 | 2010 |
| Experimental study on effect of second-harmonic injection at input of classes F and F− 1 GaN power amplifiers A Ramadan, T Reveyrand, A Martin, JM Nebus, P Bouysse, L Lapierre, ... Electronics Letters 46 (8), 570-572, 2010 | 29 | 2010 |
| High efficiency class B GaN power amplifier with dynamic gate biasing for improved linearity P Medrel, A Ramadan, JM Nebus, P Bouysse, L Lapierre, JF Villemazet Electronics letters 48 (18), 1136-1137, 2012 | 24 | 2012 |
| Efficiency enhancement of GaN power HEMTs by controlling gate-source voltage waveform shape A Ramadan, A Martin, T Reveyrand, JM Nebus, P Bouysse, L Lapierre, ... 2009 European Microwave Conference (EuMC), 1840-1843, 2009 | 21 | 2009 |
| Study and design of high efficiency switch mode GaN power amplifiers at L-band frequency A Ramadan, A Martin, D Sardin, T Reveyrand, JM Nebus, P Bouysse, ... 2009 International Conference on Advances in Computational Tools for …, 2009 | 9 | 2009 |
| Efficiency Enhancement of GaN Power Amplifiers over Wide Bandwidth by an Active Control of Gate Source Waveforms A Ramadan, T Reveyrand, A Martin, JM Nebus, P Bouysse, L Lapierre, ... 5th Space Agency-MOD Round Table Workshop on GaN Component Technologies, ESTEC, 2010 | 1 | 2010 |
| Using Data Analytics for Evaluating Social and Economic Impacts of Post-COVID Pandemic A Abboud, H Harb, A Ramadan, C Zaki, L Saker, M Ibrahim, A Nasser Applied Mathematics & Information Sciences 18 (2), 259-269, 2024 | | 2024 |
| Endurance Track: A Comprehensive Embedded System for Equestrian Endurance Race Management A Ramadan, M Mohamad, E Alamari, C Zaki Information Sciences Letters, http://dx.doi.org/10.18576/isl/121106 12 (11 …, 2023 | | 2023 |
| High Efficiency Two Stage Microwave GaN Power Amplifier with Gate Source Waveform Shaping of the Power Stage JM Nebus, A Ramadan, P Bouysse, T Reveyrand, D Barataud, R Quéré, ... 41st European Microwave Conference, EuMW 2011, W08-23 pages, 2011 | | 2011 |
| Conception d’un amplificateur de puissance à 2 étages intégrant une préformation de la tension de commande d’entrée. A Ramadan, T Reveyrand, JM Nebus, P Bouysse, L Lapierre, ... 17eme Journées Nationales Micro-ondes (JNM 2011), 1C1, 2011 | | 2011 |
| Amplification de puissance à haut rendement en bande L et en technologie GaN intégrant une pré formation de la tension de commande d'entrée A Ramadan Limoges, 2010 | | 2010 |
| Analyse comparative des classes en commutation (F, F-, E) pour l’amplification de puissance en technologie GaN. A Ramadan, D Sardin, T Reveyrand, JM Nebus, P Bouysse, L Lapierre, ... Journées Nationales Micro-ondes (JNM)(2009), pp. 1C3-1C3, 2009 | | 2009 |
| High efficiency two stage microwave GaN power amplification with gate source waveform shaping of the power stage JM Nébus, A Ramadan, P Bouysse, T Reveyrand, D Barataud, R Quere | | |
| Computational Modeling of Digital Electronic Devices A Ramadan | | |
| DOCTEUR DE L'UNIVERSITE DE LIMOGES A RAMADAN | | |
| Efficiency enhancement of GaN power amplifiers over a wide bandwidth by an active control of gate source voltage waveforms A Ramadan, T Reveyrand, A Martin, JM Nebus, P Bouysse, L Lapierre, ... | | |
