| Method of forming dielectric films, new precursors and their use in semiconductor manufacturing C Dussarrat, N Blasco, A Pinchart, C Lachaud US Patent 8,668,957, 2014 | 517 | 2014 |
| Organosilane precursors for ALD/CVD silicon-containing film applications C Dussarrat, G Kuchenbeiser, VR Pallem US Patent 9,371,338, 2016 | 468 | 2016 |
| Method of forming silicon oxide containing films C Dussarrat, J Gatineau, K Yanagita, E Tsukada, I Suzuki US Patent 8,227,032, 2012 | 405 | 2012 |
| Preparation of lanthanide-containing precursors and deposition of lanthanide-containing films VR Pallem, C Dussarrat US Patent 8,283,201, 2012 | 391 | 2012 |
| Method of forming silicon-containing films C Dussarrat US Patent App. 12/233,057, 2009 | 375 | 2009 |
| Hexakis (monohydrocarbylamino) disilanes and method for the preparation thereof C Dussarrat, JM Girard US Patent 7,019,159, 2006 | 364 | 2006 |
| Metal precursors containing beta-diketiminato ligands C Dussarrat, BJ Feist US Patent 9,103,019, 2015 | 322 | 2015 |
| Novel lanthanide beta-diketonate precursors for lanthanide thin film deposition C Dussarrat, VM Omarjee US Patent App. 12/536,804, 2010 | 315 | 2010 |
| Hafnium-containing film forming compositions for vapor deposition of hafnium-containing films C Dussarrat, JM Girard, H Ishii, C Lansalot-Matras, J Lieffrig US Patent App. 15/337,765, 2017 | 312 | 2017 |
| Cyclic organoaminosilane precursors for forming silicon-containing films and methods of using the same K Higashino, G Kuchenbeiser, C Dussarrat US Patent App. 15/199,330, 2016 | 310 | 2016 |
| Compounds for depositing tellurium-containing films BJ Feist, C Dussarrat US Patent 8,193,388, 2012 | 293 | 2012 |
| Group 6 transition metal-containing compounds for vapor deposition of group 6 transition metal-containing films C Lansalot-Matras, J Lieffrig, C Dussarrat, A Colas, JM Kim US Patent 10,731,251, 2020 | 239 | 2020 |
| Process for forming gate insulators for tft structures C Dussarrat, C Lansalot-Matras, A Colas US Patent App. 15/199,223, 2016 | 239 | 2016 |
| Preparation of Lanthanide-Containing Precursors and Deposition of Lanthanide-Containing Films VR Pallem, BJ Feist, N Stafford, C Dussarrat US Patent App. 12/414,152, 2010 | 237 | 2010 |
| Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer JG Song, GH Ryu, SJ Lee, S Sim, CW Lee, T Choi, H Jung, Y Kim, Z Lee, ... Nature communications 6 (1), 7817, 2015 | 227 | 2015 |
| Atomic Layer Deposition of SrTiO3 Thin Films with Highly Enhanced Growth Rate for Ultrahigh Density Capacitors SW Lee, JH Han, S Han, W Lee, JH Jang, M Seo, SK Kim, C Dussarrat, ... Chemistry of Materials 23 (8), 2227-2236, 2011 | 153 | 2011 |
| A review of cation-ordered rock salt superstructure oxides GC Mather, C Dussarrat, J Etourneau, AR West Journal of Materials Chemistry 10 (10), 2219-2230, 2000 | 152 | 2000 |
| Hydrophobicity of rare earth oxides grown by atomic layer deposition IK Oh, K Kim, Z Lee, KY Ko, CW Lee, SJ Lee, JM Myung, ... Chemistry of Materials 27 (1), 148-156, 2015 | 134 | 2015 |
| Atomic layer deposition and characterization of vanadium oxide thin films T Blanquart, J Niinistö, M Gavagnin, V Longo, M Heikkilä, E Puukilainen, ... RSC advances 3 (4), 1179-1185, 2013 | 115 | 2013 |
| Methods for producing silicon nitride films and silicon oxynitride films by thermal chemical vapor deposition C Dussarrat, JM Girard, T Kimura, N Tamaoki, Y Sato US Patent 7,192,626, 2007 | 114 | 2007 |
