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Victor Yu. Aristov
Victor Yu. Aristov
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Year
Chemistry and electronic properties of metal-organic semiconductor interfaces: Al, Ti, In, Sn, Ag, and Au on PTCDA
Y Hirose, A Kahn, V Aristov, P Soukiassian, V Bulovic, SR Forrest
Physical Review B 54 (19), 13748, 1996
4541996
Graphene synthesis on cubic SiC/Si wafers. Perspectives for mass production of graphene-based electronic devices
VY Aristov, G Urbanik, K Kummer, DV Vyalikh, OV Molodtsova, ...
Nano letters 10 (3), 992-995, 2010
2572010
Chemistry, diffusion, and electronic properties of a metal/organic semiconductor contact: In/perylenetetracarboxylic dianhydride
Y Hirose, A Kahn, V Aristov, P Soukiassian
Applied Physics Letters 68 (2), 217-219, 1996
1711996
Transition metal phthalocyanines: Insight into the electronic structure from soft x-ray spectroscopy
T Kroll, R Kraus, R Schönfelder, VY Aristov, OV Molodtsova, P Hoffmann, ...
The Journal of Chemical Physics 137 (5), 2012
1152012
Temperature-Induced Semiconducting Reversible Phase Transition on the -SiC(100) Surface
VY Aristov, L Douillard, O Fauchoux, P Soukiassian
Physical review letters 79 (19), 3700, 1997
931997
Spin and orbital ground state of Co in cobalt phthalocyanine
T Kroll, VY Aristov, OV Molodtsova, YA Ossipyan, DV Vyalikh, B Buchner, ...
The Journal of Physical Chemistry A 113 (31), 8917-8922, 2009
782009
Chemistry and electronic properties of metal contacts on an organic molecular semiconductor
Y Hirose, CI Wu, V Aristov, P Soukiassian, A Kahn
Applied surface science 113, 291-298, 1997
771997
Experimental evidence for 400-meV valence-band dispersion in solid
G Gensterblum, JJ Pireaux, PA Thiry, R Caudano, T Buslaps, RL Johnson, ...
Physical Review B 48 (19), 14756, 1993
731993
Surface core-level shifts of Si (111) 7× 7: A fundamental reassessment
G Le Lay, M Göthelid, TM Grehk, M Björkquist, UO Karlsson, VY Aristov
Physical Review B 50 (19), 14277, 1994
711994
Alkali-metal-induced highest Fermi-level pinning position above semiconductor conduction band minimum
VY Aristov, G Le Lay, P Soukiassian, K Hricovini, JE Bonnet, J Osvald, ...
Europhysics Letters 26 (5), 359, 1994
651994
Chemistry and electronic properties of a metal-organic semiconductor interface: In on CuPc
VY Aristov, OV Molodtsova, VM Zhilin, DV Vyalikh, M Knupfer
Physical Review B 72 (16), 165318, 2005
592005
Electronic properties of potassium-doped CuPc
OV Molodtsova, VM Zhilin, DV Vyalikh, VY Aristov, M Knupfer
Journal of applied physics 98 (9), 2005
572005
The electronic structure of cobalt phthalocyanine
VV Maslyuk, VY Aristov, OV Molodtsova, DV Vyalikh, VM Zhilin, ...
Applied Physics A 94, 485-489, 2009
542009
Giant band bending induced by Ag on InAs (110) surfaces at low temperature
VY Aristov, G Le Lay, K Hricovini, JE Bonnet
Physical Review B 47 (4), 2138, 1993
541993
Engineering of the energy level alignment at organic semiconductor interfaces by intramolecular degrees of freedom: Transition metal phthalocyanines
M Grobosch, VY Aristov, OV Molodtsova, C Schmidt, BP Doyle, ...
The Journal of Physical Chemistry C 113 (30), 13219-13222, 2009
532009
l, M. Nielsen, E. Findeisen, and RIG Uhrberg
G Le Lay, VY Aristov, L Seehofer, T Buslaps, RL Johnson, M Gothelid, ...
Surf. Sci 307 (309), 280, 1994
531994
Fabrication of [001]-oriented tungsten tips for high resolution scanning tunneling microscopy
AN Chaika, NN Orlova, VN Semenov, EY Postnova, SA Krasnikov, ...
Scientific reports 4 (1), 3742, 2014
522014
Chemisorption of bromine on cleaved silicon (111) surfaces: an X-ray standing wave interference spectrometric analysis
BN Dev, V Aristov, N Hertel, T Thundat, WM Gibson
Surface science 163 (2-3), 457-477, 1985
521985
Electron accumulation layer on clean In-terminated InAs (0 0 1)(4× 2)-c (8× 2) surface
P De Padova, C Quaresima, P Perfetti, R Larciprete, R Brochier, C Richter, ...
Surface science 482, 587-592, 2001
512001
Pairs of Si atomic lines self-assembling on the β-SiC (100) surface: An 8× 2 reconstruction
L Douillard, VY Aristov, F Semond, P Soukiassian
Surface science 401 (1), L395-L400, 1998
511998
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