| Physical thickness 1. x nm ferroelectric HfZrOx negative capacitance FETs MH Lee, ST Fan, CH Tang, PG Chen, YC Chou, HH Chen, JY Kuo, MJ Xie, ... 2016 IEEE International Electron Devices Meeting (IEDM), 12.1. 1-12.1. 4, 2016 | 185 | 2016 |
| Ferroelectric Al:HfO2negative capacitance FETs MH Lee, PG Chen, ST Fan, YC Chou, CY Kuo, CH Tang, HH Chen, ... 2017 IEEE International Electron Devices Meeting (IEDM), 23.3. 1-23.3. 4, 2017 | 44 | 2017 |
| Strain effect on the stability in ferroelectric HfO2 simulated by first-principles calculations ST Fan, YW Chen, CW Liu Journal of Physics D: Applied Physics 53 (23), 23LT01, 2020 | 37 | 2020 |
| Energy preference of uniform polarization switching for HfO2 by first-principle study YW Chen, ST Fan, CW Liu Journal of Physics D: Applied Physics 54 (8), 085304, 2020 | 19 | 2020 |
| Band calculation of lonsdaleite Ge PS Chen, ST Fan, HS Lan, CW Liu Journal of Physics D: Applied Physics 50 (1), 015107, 2016 | 13 | 2016 |
| The hysteresis-free negative capacitance field effect transistors using non-linear poly capacitance ST Fan, JY Yan, DC Lai, CW Liu Solid-State Electronics 122, 13-17, 2016 | 10 | 2016 |
| Field effect transistors and methods of forming same PS Chen, SC Pan, CW Liu, ST Fan US Patent 9,490,430, 2016 | 9 | 2016 |
| Negative capacitance FETs with steep switching by ferroelectric Hf-based oxide MH Lee, PG Chen, ST Fan, CY Kuo, HH Chen, SS Gu, YC Chou, ... 2017 International Symposium on VLSI Technology, Systems and Application …, 2017 | 8 | 2017 |
| Modeling and simulation of negative capacitance gate on Ge FETs YH Liao, ST Fan, CW Liu ECS Transactions 75 (8), 461, 2016 | 8 | 2016 |
| First Experimental Study of Floating-Body Cell Transient Reliability Characteristics of Both N-and P-Channel Vertical Gate-All-Around Devices with Split-Gate Structures CL Sung, ST Fan, HT Lue, WC Chen, PY Du, TH Yeh, KC Wang, CY Lu 2022 IEEE International Reliability Physics Symposium (IRPS), 7B. 2-1-7B. 2-6, 2022 | 4 | 2022 |
| First theoretical modeling of the bandgap-engineered oxynitride tunneling dielectric for 3D flash memory devices starting from the ab initio calculation of the band diagram to … WC Chen, HT Lue, ST Fan, TH Hsu, PC Jhang, UG Vej-Hansen, ... 2021 IEEE International Electron Devices Meeting (IEDM), 8.3. 1-8.3. 4, 2021 | 4 | 2021 |
| Semiconductor device and manufacturing method thereof PS Chen, ST Fan, CW Liu US Patent 11,018,239, 2021 | 3 | 2021 |
| Ab Initio Study on Tuning the Ferroelectricity of Orthorhombic HfO2 ST Fan, YW Chen, PS Chen, CW Liu 2020 International Symposium on VLSI Technology, Systems and Applications …, 2020 | 2 | 2020 |
| Semiconductor device and method ST Fan, PS Chen, CW Liu, CW Liu US Patent 10,636,651, 2020 | 2 | 2020 |
| Semiconductor device and method ST Fan, PS Chen, CW Liu, CW Liu US Patent 11,043,376, 2021 | 1 | 2021 |
| Semiconductor device and method ST Fan, PS Chen, CW Liu, CW Liu US Patent 11,664,218, 2023 | | 2023 |
| Semiconductor device and manufacturing methods thereof L Yu-Hung, SC Pan, ST Fan, MH Lee, CW Liu US Patent 10,686,072, 2020 | | 2020 |
| Field effect transistors and methods of forming same PS Chen, SC Pan, CW Liu, ST Fan US Patent 10,290,708, 2019 | | 2019 |
| Atomically flat metal-insulator-metal capacitors with enhanced linearity CH Huang, ST Fan, PS Chen, R Sankar, FC Chou, CW Liu 2016 IEEE Silicon Nanoelectronics Workshop (SNW), 60-61, 2016 | | 2016 |
