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Dr. L Chandrasekar
Dr. L Chandrasekar
Indian Institute of Information Technology Design and Manufacturing (IIITDM)
Verified email at iiitdm.ac.in - Homepage
Title
Cited by
Cited by
Year
Implementation of Hough Transform for image processing applications
L Chandrasekar, G Durga
2014 International Conference on Communication and Signal Processing, 843-847, 2014
222014
Label free DNA detection techniques using dielectric modulated FET: inversion or tunneling?
R Priyanka, L Chandrasekar, RR Shaik, KP Pradhan
IEEE Sensors Journal 21 (2), 2316-2323, 2020
142020
Back-gate bias effect on the linearity of pocket doped FDSOI MOSFET
RR Shaik, L Chandrasekar, JP Raskin, KP Pradhan
Microelectronics Journal 121, 105365, 2022
82022
Carrier density and quantum capacitance model for doped graphene
L Chandrasekar, KP Pradhan
2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-4, 2020
82020
Is accumulation or inversion mode dielectric modulated FET better for label-free biosensing?: A comparative investigation
A Sariki, KV Rao, L Chandrasekar, RR Shaik, KP Pradhan
AEU-International Journal of Electronics and Communications 137, 153791, 2021
52021
Self-consistent modeling of B or N substitution doped bottom gated graphene FET with nonzero bandgap
L Chandrasekar, KP Pradhan
IEEE Transactions on Electron Devices 68 (7), 3658-3664, 2021
52021
A study of workfunction variation in pocket doped fd-soi technology towards temperature analysis
RR Shaik, G Arun, L Chandrasekar, KP Pradhan
Silicon 12 (12), 3047-3056, 2020
52020
A Robust-Compact Model to Emulate Neuro-Mimetic Dynamics With Doped-HfO2 Ferroelectric-FET Based Neurons
RR Shaik, L Chandrasekar, KP Pradhan
IEEE Transactions on Nanotechnology 22, 178-183, 2023
42023
Memoryless linearity in undoped and B-doped graphene FETs: A relative investigation to report improved reliability
L Chandrasekar, KP Pradhan
Microelectronics Reliability 125, 114363, 2021
42021
Memoryless non‐linearity in B‐Substitution doped and undoped graphene FETs: A comparative investigation
C Lakshumanan, KP Pradhan
IET Circuits, Devices & Systems 15 (7), 641-648, 2021
42021
Design of fractal antenna with modified Sierpinski Carpet for WiMAX applications
D Selvaraj, L Chandrasekar, GS Su Sangeetha, B Sowmiya, P Varshini
International Research Journal of Engineering Research and Technology 7 (4), 1-9, 2018
32018
Modeling and investigation of electronic transport properties of boron or nitrogen substitution doped single layer graphene
L Chandrasekar, KP Pradhan
2021 IEEE 16th Nanotechnology Materials and Devices Conference (NMDC), 1-4, 2021
22021
A Robust-Compact Model to Imitate the Neuronal Dynamics with 2T based FeFET-MOSFET Capturing Temperature Effects
RR Shaik, L Chandrasekar, V Rajakumari, KP Pradhan
2022 IEEE International Conference on Emerging Electronics (ICEE), 1-5, 2022
12022
An Analytical Model to Emulate the Biological Synapses Using B or N Substitution Doped Graphene FET With Hysteresis Engineering
L Chandrasekar, RR Shaik, V Rajakumari, KP Pradhan
2022 IEEE International Conference on Emerging Electronics (ICEE), 1-4, 2022
12022
Computationally efficient region-wise potential-based extremely closed-form analytical modeling of B/N substitution doped GFETs
L Chandrasekar, KP Pradhan
IEEE Transactions on Electron Devices 69 (8), 4708-4716, 2022
12022
Modeling the electrostatics of 2-terminal boron or nitrogen substitution doped metal-insulator-graphene (mig) structure
L Chandrasekar, KP Pradhan
2020 5th IEEE International Conference on Emerging Electronics (ICEE), 1-4, 2020
12020
Comparative Study on Nonlinearity of Doped and Undoped GFET using DC Characteristics
L Chandrasekar, KP Pradhan, P Kumar
2019 IEEE 16th India Council International Conference (INDICON), 1-4, 2019
12019
A recurrence model capturing interface traps for non-zero bandgap GFETs towards dynamic mimicking of synaptic plasticity
L Chandrasekar, RR Shaik, V Rajakumari, KP Pradhan
Semiconductor Science and Technology, 2024
2024
Applications of graphene in electronics: graphene field effect transistors
L Chandrasekar, KP Pradhan
Recent Advances in Graphene and Graphene-Based Technologies, 7-1-7-26, 2023
2023
Numerical and Analytical Modeling of B or N Substitution Doped Single Layer Graphene FET: RF and Synaptic Applications
L CHANDRASEKAR
INDIAN INSTITUTE OF INFORMATION TECHNOLOGY, DESIGN AND MANUFACTURING, 0
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