[BOOK][B] MOS (metal oxide semiconductor) physics and technology
EH Nicollian, JR Brews - 2002 - books.google.com
Explains the theoretical and experimental foundations of the measurement of the electrical
properties of the MOS system and the technology for controlling its properties. Emphasizes …
properties of the MOS system and the technology for controlling its properties. Emphasizes …
A charge-sheet model of the MOSFET
JR Brews - Solid-State Electronics, 1978 - Elsevier
Intuition, device evolution, and even efficient computation require simple MOSFET (metal-
oxide-semiconductor field-effect transistor) models. Among these simple models are charge …
oxide-semiconductor field-effect transistor) models. Among these simple models are charge …
Generalized guide for MOSFET miniaturization
JR Brews, W Fichtner, EH Nicollian… - 1979 International …, 1979 - ieeexplore.ieee.org
As MOSFET dimensions are reduced, it is desirable to preserve long-channel MOSFET
behavior. In general, lower voltages, shallower junctions, thinner oxides, and heavier doping …
behavior. In general, lower voltages, shallower junctions, thinner oxides, and heavier doping …
Rapid interface parameterization using a single MOS conductance curve
JR Brews - Solid-State Electronics, 1983 - Elsevier
Figures are presented for finding interface trap density D it capture probability cp, and
interfacial broadening σ s, from a single curve of small-signal MOS interface trap …
interfacial broadening σ s, from a single curve of small-signal MOS interface trap …
SEGR and SEB in n-channel power MOSFETs
…, E Lorfevre, JM Palau, JR Brews… - … on Nuclear Science, 1996 - ieeexplore.ieee.org
SEGR and SEB in N-Channel Power MOSFETS - Nuclear Science, IEEE Transactions on
Page 1 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 43, NO. 6, DECEMBER 1996 …
Page 1 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 43, NO. 6, DECEMBER 1996 …
A conceptual model of a single-event gate-rupture in power MOSFETs
JR Brews, M Allenspach, RD Schrimpf… - IEEE transactions on …, 1993 - ieeexplore.ieee.org
Proposes a physical model of hole-collection following a heavy-ion strike to explain the
development of oxide fields sufficient to cause single-event gate rupture (SEGR) in power …
development of oxide fields sufficient to cause single-event gate rupture (SEGR) in power …
Transmission line models for lossy waveguide interconnections in VLSI
JR Brews - IEEE transactions on electron devices, 1986 - ieeexplore.ieee.org
At high frequencies the waveguide nature of interconnections in VLSI circuits becomes
important. Moreover, losses in interconnection are a major feature, not a perturbation. Here it …
important. Moreover, losses in interconnection are a major feature, not a perturbation. Here it …
Evaluation of SEGR threshold in power MOSFETs
M Allenspach, JR Brews, I Mouret… - IEEE transactions on …, 1994 - ieeexplore.ieee.org
Bias values, determined experimentally to result in single-event gate rupture (SEGR) in
power metal oxide semiconductor field effect transistors (MOSFETs), are used in 2-D device …
power metal oxide semiconductor field effect transistors (MOSFETs), are used in 2-D device …
Subthreshold behavior of uniformly and nonuniformly doped long-channel MOSFET
JR Brews - IEEE Transactions on Electron Devices, 1979 - ieeexplore.ieee.org
The subthreshold turnoff behavior of the long-channel MOSFET (metal-oxide-semiconductor
field-effect transistor) is characterized by the gate bias swing S needed to reduce the …
field-effect transistor) is characterized by the gate bias swing S needed to reduce the …
Surface potential fluctuations generated by interface charge inhomogeneities in MOS devices
JR Brews - Journal of Applied Physics, 1972 - aip.scitation.org
Small‐signal conductance peaks in metal‐oxide‐semiconductor (MOS) devices have been
found experimentally to be much wider than predicted by the surface‐state continuum model …
found experimentally to be much wider than predicted by the surface‐state continuum model …
