Power semiconductor devices are key components in power conversion systems. Silicon
carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable
for high-voltage and low-loss power devices. Through recent progress in the crystal growth …

Journal of Applied Physics 39, 4871 (1968); https://doi.org/10.1063/1.1655871 … Cite as: Journal
of Applied Physics 39, 4871 (1968); https://doi.org/10.1063/1.1655871 Submitted: 27 November
1967 . Published Online: 19 November 2003 … The Poole-Frenkel Effect with Compensation …

Plane‐wave explosive systems were used to accelerate thin metal plates to high velocities.
Shock pressures resulting from the collision of these driver plates with a stationary target
plate are approximately three times greater than the original shock pressure in the driver …

It is shown by an analysis similar to that for the spinodal decomposition of a supersaturated
solution that an array of dislocations, modelled by parallel screw dislocations, of uniform
density, is unstable; the dislocations move to form a structure having a modulated …

The transport properties of polycrystalline silicon films are examined and interpreted in terms
of a modified grain‐boundary trapping model. The theory has been developed on the
assumption of both a δ‐shaped and a uniform energy distribution of interface states. A …

The elastic coefficients for an arbitrary rectangular coordinate system are calculated as a
function of direction cosines in the crystal. Young's modulus, shear modulus, and Poisson's
ratio are defined in general and values tabulated for some of the more important directions …

An analysis of the chip geometry and the force system found in the case of orthogonal
cutting accompanied by a type 2 chip has yielded a collection of useful equations which
make possible the study of actual machining operations in terms of basic mechanical …

The Weizsäcker‐Williams method is used to calculate the gain due to the induced emission
of radiation into a single electromagnetic mode parallel to the motion of a relativistic electron
through a periodic transverse dc magnetic field. Finite gain is available from the far‐infrared …

For several orders of a particular set of planes, a plot of InAn (l) vs [2 gives a curve which is a
straight line for the small values of l. The intercept on the axis of ordinates gives InAnP, and
the slope gives-2... 2 (Zn2) Av from which the mean square strain can be computed. This …

2914 COMMUNICATIONS during solution growth. These factors affect the growth process
and therefore the number of vacancies, dislocations, and other imperfections which may be
formed or propagated through the growing crystal. In diamond and sphalerite structures the …