Nanoscale characterization of strained silicon by tip-enhanced Raman spectroscope in reflection mode
Y Saito, M Motohashi, N Hayazawa, M Iyoki… - Applied physics …, 2006 - aip.scitation.org
We observe localized strains in strained silicon by tip-enhanced near-field Raman
spectroscope in reflection mode. The tip-enhanced Raman spectra show that the Raman
frequency and intensity of strained silicon were different within a crosshatch pattern induced …
spectroscope in reflection mode. The tip-enhanced Raman spectra show that the Raman
frequency and intensity of strained silicon were different within a crosshatch pattern induced …
